Samsung Display Co., Ltd.

Samsung Mobile Display Co., Ltd.

Moo-Soon Ko

Choong-Youl Im

Do-Hyun Kwon

Ju-Won Yoon

Min-Woo Woo

Il-Jeong Lee

Jae-Ho Yoo

Hee-Seong Jeong

Chul-Woo Jeong

Sung-Soo Koh

Chi-Wook An

Ok-Byoung Kim

Jae-Yong Kim

Tae-Gon Kim

Min Woo Woo

Oh-Seob Kwon

Seung-Yeon Cho

Il-Jung Lee

Jong-Hyuk Lee

Soon-Ryong Park

Sung-Chul Kim

Woo-Suk Jung

Gyoo-Chul Jo

Wangwoo Lee

Sung-Eun Lee

Tae-Kyu Kim

Duk-Jin Lee

Jung-Kyu Lee

Min-Jung Lee

Choong Youl Im

Il-Ryong Cho

Woong-Sik Choi

Do Hyun Kwon

Ju Won Yoon

Ji-Yeon Baek

Deuk-Jong Kim

Hyun-Chul Son

Il Jung Lee

A display device includes: a substrate including a display area and a peripheral area; a first conductive layer on the substrate in the peripheral area; an insulation layer covering the first conductive layer; and a second conductive layer on the insulation layer in the peripheral area, the second conductive layer including a plurality of first holes, wherein the first conductive layer does not overlap the first holes of the second conductive layer.

Display device having overlapped conducting layers with holes in peripheral area and method of manufacturing the same

An organic light emitting diode display includes: a substrate; a substrate insulating layer on the substrate; a capacitor on the substrate insulating layer; a driving thin film transistor including a driving gate electrode connected to the capacitor; and an organic light emitting element connected to the driving thin film transistor, where the capacitor includes: a first capacitor electrode on the substrate insulating layer; a second capacitor electrode on the first capacitor electrode; a capacitor insulating layer between the first capacitor electrode and the second capacitor electrode and contacting the first capacitor electrode and the second capacitor electrode, the capacitor insulating layer having a higher dielectric constant than the substrate insulating layer; and an auxiliary electrode contacting at least one of the first capacitor electrode or the second capacitor electrode.

Organic light emitting diode display

An organic light emitting diode (OLED) display including a first pixel, a second pixel, and a third pixel disposed in a matrix and first to third driving voltage lines configured to transmit a driving voltage to the first to third pixel, respectively. A width of one driving voltage line among the first to third driving voltage lines is different from the width of the other driving voltage lines.

Organic light emitting diode display including driving voltage line

A method for manufacturing a flexible display device includes forming a heat generator on a carrier substrate, forming a flexible substrate on the heat generator, forming a thin film transistor on the flexible substrate, forming a light emitting element connected to the thin film transistor, and separating the flexible substrate from the heat generator by application of heat to the flexible substrate, the application of heat including generation of heat by the heat generator.

Flexible display device and manufacturing method thereof

A backplane for a flat panel display apparatus, includes: a thin film transistor (TFT) on a substrate and including an active layer, a gate electrode, a source electrode, and a drain electrode; a light-blocking layer between the substrate and the TFT; a first insulating layer between the light-blocking layer and the TFT; a capacitor including a first electrode on the same plane as the light-blocking layer, and a second electrode on the first electrode, wherein the first insulating layer is between the first electrode and the second electrode; and a pixel electrode on the same plane as the light-blocking layer.

Backplane for flat panel display apparatus, method of manufacturing the backplane, and organic light emitting display apparatus including the backplane

An organic light-emitting diode (OLED) display apparatus and a method of manufacturing the OLED display apparatus, the apparatus includes anode electrodes having different thicknesses for different types of sub-pixels.

Method of manufacturing OLED display apparatus

Provided are organic luminescence display and method for manufacturing the same. According to an aspect of the present invention, there is provided an organic luminescence display comprising a substrate and a plurality of pixels disposed on the substrate. The pixels comprise a plurality of first pixels, each comprising a first organic light-emitting layer, and a plurality of second pixels which are smaller than the first pixels and each of which comprises a second organic light-emitting layer. The surface roughness of the second organic light-emitting layer is greater than the surface roughness of the first organic light-emitting layer.

Organic luminescence display and method of manufacturing the same

An organic light emitting diode (OLED) display includes a scan line, a data line, a driving voltage line, a switching transistor, a driving transistor and an OLED. The scan line is formed on a substrate to transmit a scan signal. The data line and the driving voltage line, intersecting the scan line, transmit a data signal and a driving voltage, respectively. The switching transistor, electrically coupled to the scan line and the data line, includes a switching semiconductor layer, a switching gate electrode, and a gate insulating layer having a first thickness. The driving transistor, electrically coupled to the switching drain electrode, includes a driving semiconductor layer, a driving gate electrode and a gate insulating layer having a second thickness. The OLED is electrically coupled to the driving drain electrode. The data line and the driving voltage line are formed with different layers from each other.

A thin film transistor (TFT) includes a semiconductor active layer, a gate electrode, a source electrode, and a drain electrode. The semiconductor active layer includes a first doped region as a source region, a second doped region as a drain region, an undoped region between the first and second doped regions. A third doped region is disposed between the second doped region and the undoped region. The gate electrode is insulated from the semiconductor active layer and overlaps the third doped region and the undoped region. The source electrode and the drain electrode are connected to the first and second doped regions.

Thin film transistor and manufacturing method thereof

A display includes a switching transistor connected to a scan line and data line, a driving transistor connected to the switching transistor, a storage capacitor between a voltage line and the driving transistor, and an organic light emitting diode connected to the driving transistor. The data line and voltage line are at different layers, and the data line and a gate electrode of the driving transistor are at different layers. Also, a plate of the storage capacitor and the gate electrode of the driving transistor are of a same layer, and semiconductor layers of the switching and driving transistors are of a same layer.

OLED display apparatus and method of manufacturing the same

An organic light emitting diode display includes a substrate main body, a semiconductor layer and a first capacitor electrode on the substrate main body, bottom surfaces of the semiconductor layer and first capacitor electrode being substantially coplanar, and each of the semiconductor layer and first capacitor electrode including an impurity-doped polysilicon layer, a gate insulating layer on the semiconductor layer and the first capacitor electrode, a gate electrode on the semiconductor layer with the gate insulating layer therebetween, and a second capacitor electrode on the first capacitor electrode with the gate insulating layer therebetween, the second capacitor electrode including a convex electrode portion and a concave electrode portion, the concave electrode portion being thinner than each of the convex electrode portion and the gate electrode.

Organic light emitting diode display and manufacturing method thereof

An organic light emitting diode display includes a substrate, a semiconductor layer on the substrate, the semiconductor layer including an impurity-doped polycrystalline silicon layer, a first capacitor electrode on the substrate main body, the first capacitor electrode including an impurity-doped polycrystalline silicon layer, and bottom surfaces of the first capacitor electrode and semiconductor layer facing the substrate main body being substantially coplanar, a gate insulating layer on the semiconductor layer and the first capacitor electrode, a gate electrode on the semiconductor layer with the gate insulating layer therebetween, and a second capacitor electrode on the first capacitor electrode with the gate insulating layer therebetween, bottom surfaces of the second capacitor electrode and gate electrode facing the substrate main body being substantially coplanar, and the second capacitor electrode having a smaller thickness than the gate electrode.

Organic light emitting diode display and method of manufacturing the same

An organic light emitting display device comprises: a substrate; a plurality of thin film transistors (TFTs) formed on a first surface of the substrate; a passivation layer covering the plurality of TFTs; a plurality of first pixel electrodes formed on the passivation layer and respectively electrically connected to the plurality of TFTs, and overlapping with the plurality of TFTs so as to cover the plurality of TFTs, and including a reflection layer formed of a light-reflecting conductive material; a second pixel electrode formed of a light-transmitting conductive material and disposed on the passivation layer so as to be electrically connected to the plurality of first pixel electrodes; an opposite electrode formed such that light is transmitted or reflected therethrough, and disposed opposite the plurality of first pixel electrodes and the second pixel electrode; and an organic layer interposed between the plurality of first pixel electrodes and the second pixel electrode, and including an emission layer. Accordingly, transmittivity of the organic light emitting display device is increased, and optical outcoupling efficiency of the organic light emitting display device is also increased during double-sided emission.

Organic light emitting display device

Growing community of inventors

Yongin, South Korea

Moo-Soon Ko