Eaton Corporation

Monroe L King

Jerald P Dykstra

Andrew M Ray

Stephen E Sampayan

Larry E Frisa

Robert A Moore

An ion beam implantation system. An ion beam is controllably deflected from an initial trajectory as it passes through spaced parallel plates that are biased by a control circuit. Once deflected, the ion beam passes through electrodes positioned along a beam travel path that both redeflect the once-deflected ion beam and accelerate the ions to a desired final energy. Ions within the beam exit the accelerator and impact a workpiece at a uniform, controlled impact angle due to ion focusing in a scanning plane and an orthogonal cross plane.

Ion beam implanter for providing cross plane focusing

An ion beam implantation system. An ion beam is controllably deflected from an initial trajectory as it passes through spaced parallel plates that are biased by a control circuit. Once deflected, the ion beam enters an accelerator that both redeflects the once deflected ion beam and acceleratres the ions to a desired final energy. When the beam exits the accelerator it moves along a trajectory that impacts a workpiece. Ions making up the ion beam all impact the workpiece at a uniform, controlled impact angle.

Reduced path ion beam implanter

An ion source of the side extraction type which includes auxiliary electrodes surrounding the cathode at the ends of the anode, and insulators surrounding the auxiliary electrodes and electrically isolating them from the anode. The auxiliary electrodes essentially define the ends of the discharge chamber, leaving the anode confined to the cylindrical surface surrounding the filament. Each insulator is made up of an inner insulator and an outer insulator with an annular space defined between them. The inner and outer insulators are each in the form of a cylinder with a radially extending flange formed at one end, and interfit with the anode and with each other such that cylindrical spaces are defined between the outer flange portion and the anode and between the inner and outer flange portions. These and other features contribute to improve the electrical isolation between the auxiliary electrode and the anode, prolong source life, and improve beam purity.

SKM ion source

An ion source (10) of the side-extraction hot cathode type in which the inherent drift of electrons toward the positive side of the cathode is minimized by the addition of auxiliary electrodes (31, 32) which surround the cathode (14) at the ends of the anode (12). The electrodes are electrically isolated from the cathode and anode, and various means are provided to apply a potentials to the electrodes, including interconnecting the electrodes, cross-connecting the electrodes to opposite ends of the cathode, and biasing the electrodes at fixed potentials with respect to the cathode, anode or ground.

Ion source

A scanning ion beam implanter having a wafer support to control the angle of incidence between an ion beam and the wafer. The wafer support preferably bends the wafer into a segment of a cylinder. As the ion beam scans across the curved wafer surface the angle of incidence remains relatively uniform. The support also includes structure for pivoting the bent wafer about a pivot axis. The pivoting of the wafer is synchronized with the scanning of the ion beam to compensate for scanning of the ion beam in a direction transverse to the direction compensated for by the cylindrical curvature of the wafer.

Ion beam implanter control system

A method and apparatus are disclosed for providing heat conduction between an article being treated in a vacuum and a support member by providing a gas under pressure of about 0.5 to 2.0 Torr between the article and the support member. The method and apparatus are described for use in a semiconductor wafer ion implantation system wherein the wafer is clamped to the support member which is cooled. A seal can be provided between the wafer and the support member adjacent the periphery of the article.

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Austin, TX, United States of America

Monroe L King