Xerox Corporation

Monroe J Hordon

Lawrence E Kowalczyk

Barry A Lees

Paul F Zukoski

Santokh Singh Badesha

William G Herbert

Gary J Maier

Ernest F Matyi

Steven M Sterling

Roger W LaForce

Alan B Mistrater

Frederick A Elder

Eugene A Swain

Peter J Schmitt

John J Wilbert

Henry T Mastalski

Alfred O Klein

Robert J Flanagan

Fred A Elder

Robert E Gerace

There is disclosed a coating method for a substrate having an end region comprising: (a) rubbing a nonwetting material across the end region to adhere the nonwetting material to the end region; and (b) contacting a portion of the substrate including the end region with a coating composition, whereby the coating composition adheres to the substrate surface free of the nonwetting material and the nonwetting material minimizes adherence of the coating composition to the end region.

Selective coating method using a nonwetting material

A process for treating a predetermined portion of a coating on a photoreceptor to remove at least part of the coating involves directing a source of high energy irradiation at the coating in the presence of at least one fluid medium to remove at least part of the coating from the predetermined portion of the coating. The source of high energy irradiation is preferably a laser beam, ultrasonic energy, or a source of high intensity heat. The at least one fluid medium is preferably at least one gas jet, liquid jet or a liquid solvent.

Process and apparatus for treating a photoreceptor coating

Acetic acid, an environmentally compatible solvent, is used in a method for removing excess coating material from an electrostatographic imaging member substrate. The method involves covering the substrate so that the excess coating material remains exposed, and then contacting acetic acid on at least part of a substrate containing the excess coating layer until the excess coating material is removed from at least part of the substrate.

Removing portions of imaging member layers from a substrate

Disclosed is a process which comprises providing an alloy of selenium, preparing powdered particles of the alloy with an average particle diameter of less than 300 microns, placing the powdered particles into a container and tumbling the container, and subsequently removing the powdered particles from the container and compressing the powdered particles into pellets.

Powder treatment process to control alloy fractionation

Disclosed is an alloying process which comprises, in the order stated (1) heating in a reaction vessel a mixture of selenium and tellurium from ambient temperature to form about 270.degree. C. to about 330.degree. C. while maintaining the mixture in a quiescent state; (2) maintaining the mixture at from about 270.degree. C. to about 330.degree. C. until the entire mixture has reached substantial equilibrium with respect to temperature while maintaining the mixture in a quiescent state; (3) subsequently heating the mixture from the range of from about 270.degree. C. to about 330.degree. C. to the range of from about 500.degree. C. to about 580.degree. C. while maintaining the mixture in a quiescent state; (4) maintaining the mixture at from about 500.degree. C. to about 580.degree. C. until the entire mixture has reached substantial equilibrium with respect to temperature while maintaining the mixture in a quiescent state; (5) thereafter maintaining the mixture at from about 500.degree. C. to about 580.degree. C. for from about 0.75 hour to about 1.5 hours while vigorously agitating the mixture; (6) subsequent to agitation, reducing the temperature of the mixture from the range of from about 500.degree. C. to about 580.degree. C. to the range of from about 425.degree. C. to about 450.degree. C. while maintaining the mixture in a quiescent state; (7) subsequently maintaining the temperature of the mixture at from about 425.degree. C. to about 450.degree. C. for from about 4 hours to about 7 hours while maintaining the mixture in a quiescent state; (8) reducing the temperature of the mixture from the range of from about 425.degree. C. to about 450.degree. C. to the range of from about 290.degree. C. to about 350.degree. C. while maintaining the mixture in a quiescent state; and (9) removing the mixture from the reaction vessel. Also disclosed is a process for preparing an imaging member which comprises preparing a selenium-tellurium alloy by the above process and vacuum evaporating the alloy onto a substrate.

Alloying and coating process

Disclosed is a process for treating particles of selenium alloy to reduce fractionation when the particles are subsequently vacuum evaporated onto a substrate which comprises (1) heating particles of an alloy of selenium and an alloying component selected from the group are exposed to oxygen; (2) exposing the particles to water vapor; and (3) subjecting the particles previously exposed to oxygen and water vapor to a vacuum. Also disclosed is a process which comprises (1) providing particles of an alloy of selenium and an alloying component selected from the group consisting of tellurium, arsenic, and mixtures thereof; (2) forming selenium oxide on the surfaces of the particles; (3) converting the selenium oxide on the particle surfaces to selenious acid; and (4) removing the selenious acid from the particle surfaces.

Process for controlling alloy fractionation

A process for the preparation of chalcogenide alloys which comprises crystallizing a chalcogenide alloy, grinding and pelletizing the crystallized product, and evaporating the alloy on, for example, a supporting substrate to form a photoreceptor.

Processes for preparing chalcogenide alloys

A process for preparing an electrophotographic imaging member comprising providing large particles of an alloy comprising selenium, tellurium and arsenic, the large particles having an average particle size of at least about 300 micrometers and an average weight of less than about 1000 mg, mechanically abrading the surfaces of the large particles while maintaining the substantial surface integrety of the large particles to form between about 3 percent by weight to about 20 percent by weight dust particles based on the total weight of the alloy prior to mechanical abrasion.

Selenium alloy treatment

An electrophotographic imaging member is disclosed consisting essentially of a supporting substrate, a charge transport layer substantially free of arsenic and tellurium and consisting essentially of selenium and a halogen selected from the group consisting of from about 4 parts per million by weight to about 13 parts per million by weight of chlorine and from about 8 parts per million by weight to about 25 parts per million by weight of iodine and a photoconductive charge generator layer comprising selenium, from about 5 percent to about 20 percent by weight tellurium, from about 0.1 percent to about 4 percent by weight arsenic, and a halogen selected from the group consisting of up to about 70 parts per million by weight of chlorine and up to about 140 parts per million by weight of iodine, one surface of the charge generator layer being in operative electrical contact with the charge transport layer and the other surface of the charge generator layer being exposed to the ambient atmosphere. This electrophotographic imaging member may be employed in a process involving depositing a substantially uniform positive electrostatic charge on the exposed surface of the photoconductive charge generator layer of the electrophotographic imaging member, exposing the electrophotographic imaging member to an imagewise pattern of electromagnetic radiation to which the selenium-tellurium-arsenic alloy photoconductive charge generating layer is responsive whereby an electrostatic latent image is formed on the electrophotographic imaging member, developing the electrostatic image with electrostatically attractable toner particles to form a toner particle deposit in image configuration, and transferring the toner particle deposit to a receiving member. The process may be repeated numerous times in an automatic device.

Multi-layered imaging member comprising selenium and tellurium

A process for preparing arsenic-selenium photoreceptors wherein the arsenic distribution in the photoreceptor, particularly at its top surface, is controlled within a preferred concentration range, which comprises controlling the evaporation rate of the arsenic-selenium alloy by means of a crucible weight sensing system to monitor alloy depletion rate and a cascade dual-loop feedback control system processing both crucible assembly weight change and temperature to modify resistive power input.

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Pittsford, NY, United States of America

Monroe J Hordon