The Royal Institution for the Advancement of Learning / Mcgill University

Monireh Moayedi Pour Fard

Odile Liboiron-Ladouceur

Md Shafiqul Hai

Meer Sakib

Mohammad Shafiqul Hai

Chunshu Zhang

As photonics evolves closer and closer to the electronic processing elements in order to meet the demands of speed, latency of evolving data communications networks and data centers the inventors, rather than seeking direct monolithically integrated CMOS based processing photonic and electronic elements, have established a different route. Namely replace the computer hubs/electrical bridges interconnecting the multiple core logic chipset elements with a photonic bridge. In this manner high risk chip-to-chip photonic point-to-point links are replaced with photonic SOCs that leverage photonics bandwidth density attribute rather than its bandwidth distance attributes. An SOI based Electronic Embedded Photonic Switching Fabric is presented supporting, for example, N&#xd7;MGb/s interconnections exploiting N channels of MGb/s wherein each channel of exploits S WDM channels of TGb/s. Embodiments of the invention also support high density optical interconnection via vertical grating couplers and multicore fibers.

Methods and systems for board level photonic bridges

CMOS compatible SOI photonic integrated circuits (PICs) offer a low cost and promising solution to future short reach optical links operating beyond 100 Gb/s. A key building block in these optical links is the external optical modulator. Amongst, the PIC geometries for external modulators are those based upon ring resonators and Mach-Zehnder interferometers (MZI) where while the latter have been reported with increased thermal stability and fabrication tolerances, the former have demonstrated lower loss and lower driving voltages leading to a more energy efficient approach. Multi-segmented electrode structure based PAM optical modulator can potentially replace the analog digital-to-analog circuits (DACs) which are commonly used to achieve the multilevel electrical driving signal. Accordingly, it would be beneficial to combine the benefits of ring resonators to provide PAM-N modulators. It would be further beneficial for such PAM-N ring resonator modulators to exploit multi-segmented electrode structures to remove the requirements for high speed DACs.

Growing community of inventors

Montreal, Canada

Monireh Moayedi Pour Fard