Infineon Technologies Ag

Monika Cornelia Voerckel

Rainer Leuschner

Manfred Engelhardt

Hermann Wendt

Bernhard Goller

Michael Roesner

Gudrun Stranzl

Martin Zgaga

Karl Mayer

Peter Zorn

Petra Fischer

Johanna Schlaminger

Bernhard Boche

Bernd Noehammer

According to various embodiments, a method for processing an electronic device may include: forming a patterned hard mask layer over a power metallization layer, the patterned hard mask layer exposing at least one surface region of the power metallization layer; and patterning the power metallization layer by wet etching of the exposed at least one surface region of the power metallization layer.

Method for patterning a power metallization layer, electronic device and method for processing an electronic device

Methods for processing a semiconductor workpiece can include providing a semiconductor workpiece that includes one or more kerf regions; forming one or more trenches in the workpiece by removing material from the one or more kerf regions from a first side of the workpiece; mounting the workpiece with the first side to a carrier; thinning the workpiece from a second side of the workpiece; and forming a metallization layer over the second side of the workpiece.

Methods for processing a semiconductor workpiece

Growing community of inventors

Finkenstein, Austria

Monika Cornelia Voerckel