Nuvoton Technology Corporation

Monika Bharti

Po-An Chen

Vivek Ningaraju

Gene Sheu

Syed Neyaz Imam

Shaik Mastanbasheer

Pooja Ravindra Deshmane

A high-voltage semiconductor device includes a semiconductor substrate having a first conductivity type, and a first high-voltage well region disposed in the semiconductor substrate and having a second conductivity type that is opposite to the first conductivity type. The high-voltage semiconductor device also includes a first buried layer disposed on the first high-voltage well region and having the first conductivity type, and a second buried layer and a third buried layer disposed on the first high-voltage well region and having the second conductivity type, wherein the first buried layer is between the second buried layer and the third buried layer. The high-voltage semiconductor device further includes a source region and a drain region disposed on the first buried layer and having the second conductivity type.

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Hsinchu, Taiwan

Monika Bharti