Northrop Grumman Systems Corporation

Monica P Lilly

Wayne Stephen Miller

Matthew J Walker

John Xavier Przybysz

Andre E Berghmans

Robert Samuel Howell

Patrick Bruckner Shea

James T Kelliher

William J Sweet

Robert Miles Young

Aaron Ashley Hathaway

Silai V Krishnaswamy

Edward R Engbrecht

Joseph A Payne

Melody E Grubbs

A solid state cooler device is disclosed that includes a first superconductor shunt, a first normal metal pad disposed on the first superconductor shunt, and a first insulator layer and a second insulator layer disposed on the normal metal pad and separated from one another by a gap. The solid state cooler device also includes a first superconductor pad disposed on the first insulator layer and a second superconductor pad disposed on the second insulator layer, a first conductive pad coupled to the first superconductor pad, and a second conductive pad coupled to the second superconductor pad. Hot electrons are removed from the first normal metal pad when a bias voltage is applied between the first conductive pad and the second conductive pad, wherein the first superconductor shunt facilitates even current distribution through the device.

Cooler device with superconductor shunts

A radio-frequency (RF) carbon-nanotube (CNT) field effect transistor (FET) device. The device includes a source contact, a drain contact, semi-conducting CNTs positioned between the source and drain contacts, high-&#x3ba; gate dielectric, and a local backgate positioned below the semi-conducting CNTs, in which the local backgate is capable of RF performance and is capable of being used in a backgate burnout process used to enhance the semiconducting to metallic tube ratio of the device.

Radio-frequency carbon-nanotube field effect transistor devices with local backgates and methods for making same

One example includes a semiconductor device. The semiconductor device include a carbon nanotube substrate, a self-assembled monolayer, and a gate oxide. The self-assembled monolayer overlies the carbon nanotube substrate and is comprised of molecules each including a tail group, a carbon backbone, and a head group. The gate oxide overlies the self-assembled monolayer, wherein the self-assembled monolayer forms an interface between the carbon nanotube substrate and the gate oxide.

Self-assembled monolayer overlying a carbon nanotube substrate

A cobalt-carbon (Co&#x2014;C) eutectic metal alloy ohmic contact for a radio-frequency (RF) carbon nanotube (CNT) field effect transistor (FET) device and a method of manufacturing same are disclosed. Embodiments of a method include providing a graphite crucible, placing Co and a C source within the graphite crucible, heating the graphite crucible containing the Co and C source such that the Co and C source combine with graphite from the graphite crucible to thereby form a Co&#x2014;C eutectic metal alloy, and creating an ohmic contact by depositing the Co&#x2014;C eutectic metal alloy directly on top surfaces of CNTs of a RF CNT FET device such that the Co&#x2014;C eutectic metal alloy is in direct contact with the CNTs. The Co&#x2014;C eutectic metal alloy ohmic contact formed in this manner is consistently stabile and uniform and functions as a high work function layer that also serves as an adhesion layer to the CNTs.

Carbon mixture ohmic contact for carbon nanotube transistor devices

A method of forming carbon nanotubes (CNTs) is disclosed. The method includes dispersing a plurality of substantially semiconductor pure carbon nanotube (CNT) seeds on a substrate to provide a seeded substrate, ozonating the seeded substrate to remove defects on end faces of the plurality of substantially semiconductor pure CNT seeds, and growing carbon extensions on the end faces of the plurality of substantially semiconductor pure CNTs seeds to form a plurality of substantially pure CNTs.

Method for growing carbon nanotubes

Cobalt-carbon eutectic metal alloy ohmic contact for carbon nanotube field effect transistors

Growing community of inventors

Frederick, MD, United States of America

Monica P Lilly