Stmicroelectronics S.r.l.

Monica Micciche′

Antonio Giuseppe Grimaldi

Nicolo′ Frazzetto

Donato Corona

Corrado Iacono

Gaetano Bazzano

Nicolò Frazzetto

An embodiment of an integrated electronic device formed in a body of semiconductor material, which includes: a substrate of a first semiconductor material, the first semiconductor material having a first bandgap; a first epitaxial region of a second semiconductor material and having a first type of conductivity, which overlies the substrate and defines a first surface, the second semiconductor material having a second bandgap wider than the first bandgap; and a second epitaxial region of the first semiconductor material, which overlies, and is in direct contact with, the first epitaxial region. The first epitaxial region includes a first buffer layer, which overlies the substrate, and a drift layer, which overlies the first buffer layer and defines the first surface, the first buffer layer and the drift layer having different doping levels.

Integrated electronic device and method for manufacturing thereof

A semiconductor structure including a substrate of semiconductor material of a first type of conductivity; a first semiconductor layer set in direct electrical contact with the substrate on a first side of the substrate; a second semiconductor layer set in direct electrical contact with the substrate on a second side of the substrate; a first active electronic device formed in the first semiconductor layer; and a second active electronic device formed in the second semiconductor layer.

Double-sided semiconductor structure and method for manufacturing same

Growing community of inventors

Enna, Italy

Monica Micciche′