Cree Gmbh

Rohinni, Inc.

Creeled, Inc.

Monica Hansen

Shuji Nakamura

Steven P DenBaars

Cody George Peterson

Andrew Parris Huska

James Ibbetson

Arpan Chakraborty

George R Brandes

Clinton Adams

Ting Li

Justin Wendt

Clint Adams

Bernd P Keller

Eric J Tarsa

James Ibbeston

An apparatus includes a coverlay layer having a void therein. A backing layer is disposed against a first side of the coverlay layer. A transmission layer is disposed against a second side of the coverlay layer opposite the first side such that a chamber is formed within the void between the transmission layer and the backing layer. The transmission layer includes a first area having a first level of light transmissivity and a second area having a second level of light transmissivity that is greater than the first level of light transmissivity. The transmission layer is oriented so that at least a portion of each of the first area and the second area overlaps the void. A light source is positioned in the chamber between the first area of the transmission layer and the backing layer.

Light vectoring apparatus

A method of applying phosphor to an unpackaged Light-Emitting Diode (LED) die includes transferring the unpackaged LED die directly to a product substrate; disposing a coverlay on the product substrate to create a cavity around the unpackaged LED die; and applying phosphor to substantially fill the cavity around the unpackaged LED die, the applying including at least one of using a squeegee to place the phosphor into the cavity, spraying the cavity with the phosphor, or disposing the phosphor in a sheet form onto the unpackaged LED die.

Method for applying phosphor to light emitting diodes and apparatus thereof

A display apparatus includes a substrate and a plurality of LEDs. Each LED is attached to the substrate via conductive pads on a side of the LED. A diffuser having light diffusing characteristics is aligned with the plurality LEDs against a surface of the substrate. The diffuser is aligned so as to nest around at least one LED of the plurality of LEDs.

Method and apparatus for light diffusion

An apparatus includes a substrate and an LED attached to the substrate via conductive pads on a first side of the LED. The LED includes a first reflective element disposed adjacent the first side of the LED so as to reflect light in a direction away from the substrate, and a second reflective element disposed adjacent a second side of the LED that opposes the first side of the LED. The second reflective element disposed so as to reflect light primarily in a direction toward the substrate.

LED components are described having primary optics provide improved LED component emission characteristics. Light fixtures are also described that utilize the LED components to provide improved light fixture emissions. One LED component according to the present invention comprises an LED chip emitting an LED chip emission pattern. A primary optic is included directly on the LED chip with LED light from the LED chip passing through the primary optic. The primary optic shapes the LED emission pattern into an LED component emission pattern with the LED component emission pattern being broader than the LED chip emission pattern.

Light emitting diode primary optic for beam shaping

A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises an LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. The composite layer comprises a first layer, and alternating plurality of second and third layers on the first layer, and a reflective layer on the topmost of said plurality of second and third layers. The second and third layers have a different index of refraction, and the first layer is at least three times thicker than the thickest of the second and third layers. For composite layers internal to the LED chip, conductive vias can be included through the composite layer to allow an electrical signal to pass through the composite layer to the LED.

Composite high reflectivity layer

A laser diode and method for fabricating same, wherein the laser diode generally comprises an InGaN compliance layer on a GaN n-type contact layer and an AlGaN/GaN n-type strained super lattice (SLS) on the compliance layer. An n-type GaN separate confinement heterostructure (SCH) is on said n-type SLS and an InGaN multiple quantum well (MQW) active region is on the n-type SCH. A GaN p-type SCH on the MQW active region, an AlGaN/GaN p-type SLS is on the p-type SCH, and a p-type GaN contact layer is on the p-type SLS. The compliance layer has an In percentage that reduces strain between the n-type contact layer and the n-type SLS compared to a laser diode without the compliance layer. Accordingly, the n-type SLS can be grown with an increased Al percentage to increase the index of refraction. This along with other features allows for reduced threshold current and voltage operation.

Laser diode and method for fabricating same

A laser diode comprising a first separate confinement heterostructure and an active region on the first separate confinement heterostructure. A second separate confinement heterostructure is on the active region and one or more epitaxial layers is on the second separate confinement heterostructure. A ridge is formed in the epitaxial layers with a first mesa around the ridge. The first mesa is 0.1 to 0.2 microns above the second confinement heterostructure.

Group-III nitride based laser diode and method for fabricating same

A substrate comprising a trench lateral epitaxial overgrowth structure including a trench cavity, wherein the trench cavity includes a growth-blocking layer or patterned material supportive of a coalescent Pendeo layer thereon, on at least a portion of an inside surface of the trench. Such substrate is suitable for carrying out lateral epitaxial overgrowth to form a bridged lateral overgrowth formation overlying the trench cavity. The bridged lateral overgrowth formation provides a substrate surface on which epitaxial layers can be grown in the fabrication of microelectronic devices such as laser diodes, high electron mobility transistors, ultraviolet light emitting diodes, and other devices in which low dislocation density is critical. The epitaxial substrate structures of the invention can be formed without the necessity for deep trenches, such as are required in conventional Pendeo epitaxial overgrowth structures.

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Santa Barbara, CA, United States of America

Monica Hansen