Samsung Electronics Co., Ltd.

Mong-sup Lee

Yoon-ho Son

Sang-Jun Lee

In-seak Hwang

Sang-jun Lee

Byoung-Yong Gwak

Wook-Yeol Yi

Byung-Ho Kwak

Yoon-Kyung Kim

Tae-Joon Park

Byung-Sul Ryu

Dong-kak Lee

Integrated circuit (IC) devices are provided. An IC device includes a substrate including an active region. The IC device includes a bit line on the substrate. The IC device includes a direct contact connected between the active region and the bit line. The IC device includes a contact plug on the substrate. Moreover, the IC device includes a boron-containing insulating pattern between the contact plug and the direct contact.

Integrated circuit devices including a boron-containing insulating pattern

A method of manufacturing a semiconductor device includes forming a first conductive structure on a substrate, forming an insulation layer on a sidewall of the first conductive structure, forming a second conductive structure a distance apart from the first conductive structure with the insulation layer therebetween, first removing a portion of the insulation layer by performing a first dry cleaning operation, second removing a reactant product used in the first dry cleaning operation or a first byproduct generated as a result of the first dry cleaning operation by performing a first purge operation, and third removing at least a portion of the remaining insulation layer by performing a second dry cleaning operation to form an air gap between the first and second conductive structures.

Method of manufactuing semiconductor device

Method of manufacturing semiconductor device

Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes a first bit line structure extending in a first direction, a second bit line structure extending in the first direction and spaced apart from the first bit line structure, a storage contact plug located between the first bit line structure and the second bit line structure, and extending in a second direction perpendicular to the first direction, a first plug insulator located between the first bit line structure and the second bit line structure, and configured to contact a side surface extending in the second direction of the storage contact plug, and a plug isolation pattern located between the first bit line structure and the first plug insulator.

Semiconductor devices having plug insulators

Growing community of inventors

Hwaseong-si, South Korea

Mong-sup Lee