Hitachi High-Tech Corporation

Hitachi-High-Technologies Corporation

Hitachi, Ltd.

Momoyo Enyama

Makoto Sakakibara

Yasuhiro Shirasaki

Akira Ikegami

Hiroya Ohta

Hajime Kawano

Koichi Hamada

Megumi Kimura

Hideyuki Kazumi

Yoichi Ose

Naomasa Suzuki

Hideto Dohi

Sayaka Kurata

Thantip Krasienapibal

Muneyuki Fukuda

Mari Nozoe

Takashi Ohshima

Satoru Yamaguchi

Toshihide Agemura

Taku Ninomiya

Kei Sakai

Michio Hatano

Ryou Yumiba

Takashi Dobashi

Katsumi Setoguchi

Takeshi Morimoto

Hiroyuki Minemura

Yasunari Sohda

Makoto Suzuki

Hiroshi Makino

Yumiko Anzai

Takeshi Kawasaki

Wen Zheng Li

Natsuki Tsuno

Yuko Sasaki

Masaki Hasegawa

Kenji Tanimoto

Tomonori Nakano

Junichi Katane

Hideo Morishita

Osamu Kamimura

Takafumi Miwa

Tomoyasu Shojo

Minseok Park

Sayaka Tanimoto

Hirokazu Tamaki

Yuta Kawamoto

Kotoko Urano

Yasunori Takasugi

Atsuko Shintani

Kaori Shirahata

Tatsuro Ide

Masumi Shirai

Akiko Kagatsume

Naohiro Kohmu

Akio Takaoka

Hiroya Ota

Hiroki Otaki

Ryuji Nishi

A photoelectron emission microscope reducing preparation time for capturing a photoelectron image with high luminance and resolution. The photoelectron emission microscope includes: a sample stage on which a sample is to be placed; an excitation light source configured to irradiate the sample with excitation light; a camera configured to detect photoelectrons emitted from the sample and capture a photoelectron image; an objective lens configured to focus the photoelectrons on a detection surface of the camera; and a control unit configured to control each unit, in which the control unit aligns, based on a luminance distribution of a first photoelectron image, a field-of-view center of the camera with an irradiation position of the excitation light, and aligns, based on a second photoelectron image and a third photoelectron image that are captured by changing a lens intensity of the objective lens, the field-of-view center with a central axis of the objective lens.

Photoelectron emission microscope

To provide a charged particle beam device including a booster electrode and an object lens that generates a magnetic field in a vicinity of a sample, and capable of preventing ion discharge, an insulator is disposed between a magnetic field lens and the booster electrode. A tip of the insulator protrudes to a tip side of an upper magnetic path from a tip of a lower magnetic path of the magnetic field lens. The tip on a lower side of the insulator is above the lower magnetic path, and a non-magnetic metal electrode is embedded between the upper magnetic path and the lower magnetic path.

Charged particle beam device

The invention provides a charged particle beam device capable of reducing a positional shift between secondary beams generated in a beam separator. The charged particle beam device includes a charged particle beam source configured to irradiate a sample with a plurality of primary beams, a plurality of detectors configured to detect secondary beams emitted from the sample in correspondence to the primary beams, and a beam separator configured to deflect the secondary beams in a direction different from that of the primary beams. The charged particle beam device further includes a deflector provided between the beam separator and the detector to correct a positional shift between the secondary beams generated in the beam separator.

An electron beam emitted from a photoexcited electron gun is increased in luminance. An electron gunincludes: a photocathodeincluding a substrateand a photoelectric film; a light sourcethat emits pulsed excitation light; a condenser lensthat focuses the pulsed excitation light toward the photocathode; and an extractor electrodethat faces the photocathode and that accelerates an electron beam generated from the photoelectric film by focusing the pulsed excitation light by the condenser lens, transmitting the pulsed excitation light through the substrate of the photocathode, and causing the pulsed excitation light to be incident on the photocathode. The pulsed excitation light is condensed at different timings at different positions on the photoelectric film of the photocathode.

Electron gun and electron beam application apparatus

A charged particle beam device includes a plurality of detectors configured to detect one or more signal charged particle beams caused by irradiation on a sample with one or more primary charged particle beams, and a control system. The control system is configured to measure an intensity distribution of the one or more signal charged particle beams detected by the plurality of detectors, and correct the intensity distribution by using a correction function. The control system is configured to generate an image based on the corrected intensity distribution.

Provided is a charged particle beam device for which deterioration in throughput in the event of abnormality of multiple beams can be prevented. The charged particle beam device includes: a stageon which a sample is mounted; a charged particle optical system configured to irradiate the sample with multiple beams including multiple primary beams; a detectorconfigured to detect secondary beams generated by interactions between the primary beams and the sample and output detection signals; and a control unitconfigured to control the stage and the charged particle optical system to generate image data based on the detection signals from the detector obtained by scanning the sample with the multiple beams using a first scanning method. The control unit changes, when the abnormality of the multiple beams is detected based on the image data, the multiple beams to scan the sample using a second scanning method, and a scanning width of the multiple beams for scanning the sample is greater in the second scanning method than in the first scanning method.

Charged particle beam device and inspection method

Deflection of a secondary beam, and astigmatism correction of a primary beam or of the secondary beam are carried out using a multi-pole electromagnetic deflector which deflects the path of the secondary beam toward a detector.

Provided is a projection electron beam application apparatus suitable for use in semiconductor manufacturing lines. An electron optical system of the electron beam application apparatus includes a mirror aberration correctordisposed perpendicular to an optical axis, a plurality of magnetic field sectorsby which an orbit of electrons is deviated from the optical axis to make the electrons incident on the mirror aberration corrector, and the orbit of the electrons emitted from the mirror aberration correctoris returned to the optical axis, and a doublet lensdisposed between adjacent magnetic field sectors along the orbit of the electrons. The plurality of magnetic field sectors have the same deflection angle for deflecting the orbit of the electrons, and the doublet lens is disposed such that an object plane and an image plane thereof are respectively central planes of the adjacent magnetic field sectors along the orbit of the electrons.

Electron beam application apparatus

The objective of the present invention is to reduce differences between individual electron beam observation devices accurately by means of image correction. This method for calculating a correction factor for correcting images between a plurality of electron beam observation devices, in electron beam observation devices which generate images by scanning an electron beam across a specimen, is characterized by including: a step in which a first electron beam observation device generates a first image by scanning a first electron beam across first and second patterns, on either a specimen including the first pattern and the second pattern, having a different shape or size to the first pattern, or a first specimen including the first pattern and a second specimen including the second pattern; a step in which a second electron beam observation device generates a second image by scanning a second electron beam across the first and second patterns; and a step in which the first or second electron beam observation device calculates a correction factor at a peak frequency extracted selectively from first and second frequency characteristics calculated on the basis of the first and second images.

Electron beam observation device, electron beam observation system, and image correcting method and method for calculating correction factor for image correction in electron beam observation device

A measurement system comprising: a measurement apparatus observing a sample based on an observation condition including parameters; and an observation condition database storing data in which a search key related to the sample and the observation condition, a control unit calculating information on an observation condition of a sample is configured to: receive an observation condition search request including a search key related to a target sample; refer the observation condition database to search for the first data matching or similar to the search key related to the target sample included in the observation condition search request, calculate, based on the searched first data, a candidate observation condition of the measurement apparatus for observing the target sample, and output display data for presenting the candidate observation condition.

Measurement system and method for setting observation conditions of measurement apparatus

An information processing system creates a teacher database configured to train an analysis model from an observation image and labeling information corresponding to the observation image using an information processor. This system includes a storage unit, an image processing unit, and a teacher database creating unit. The storage unit stores image processing data formed of information showing a relationship between an observation condition and a parameter relating to the observation image. Further stores a first observation image, a first observation condition, and first labeling information. The image processing unit accepts the first observation image and the first observation condition as inputs, performs image processing corresponding to the parameter to the first observation image based on the image processing data, and creates a second observation image corresponding to a second observation condition. The teacher database creating unit creates the teacher database from the second observation image and the first labeling information.

Information processing system and information processing method

To provide an electron microscope capable of performing the switching-over between normal illumination and annular illumination, wide-area irradiation, an interference pattern as desired or normal illumination in an expeditious and readily manner or achieving a better S/N ratio, the electron microscope comprises a photocathodewith negative electron affinity in use; an excitation optical system to excite the photocathode; and an electron optics system to irradiate an electron beamgenerated from the photocathode by excitation lightirradiated through the excitation optical system onto a sample, the excitation optical system including a light source devicefor the excitation light; and an optical modulation meanswhich is disposed in an optical path of the excitation light to perform spatial phase modulation to the excitation light.

Electron microscope

A charged particle beam application apparatus includes a beam separator. The beam separator includes a first magnetic pole, a second magnetic pole facing the first magnetic pole, a first electrode and a second electrode that extend along an optical axis of a primary beam and are arranged in a first direction perpendicular to the optical axis, on a first surface of the first magnetic pole which faces the second magnetic pole, and a third electrode and a fourth electrode that extend along the optical axis and face the first electrode and the second electrode, respectively, on a second surface of the second magnetic pole which faces the first magnetic pole.

Charged particle beam application apparatus

Provided is an electron beam observation device that includes: an electron source; an objective lens concentrating an electron beam emitted from the electron source; and a control unit configured to perform control such that a plurality of images is generated by capturing images of a reference sample having a specific pattern, and a frequency characteristic is calculated for each of the plurality of images, in which an image is generated based on a secondary signal generated from a sample due to irradiation of the sample with the electron beam, and the control unit holds the plurality of frequency characteristics.

Electron beam observation device, electron beam observation system, and control method of electron beam observation device

An image forming apparatus includes an observation image input section in which a plurality of observation images is input, an emphasis information input section that inputs information to be emphasized, a storage section that defines a plurality of conversion functions that converts the plurality of observation images into a converted image on the basis of a function for conversion and takes, as a parameter, a gradation value of each pixel in the plurality of observation images and a plurality of emphasis functions that takes, as a parameter, a gradation value of each pixel in the conversion functions, an image calculation section that calculates an image in which information to be emphasized is emphasized on the basis of the plurality of input observation images, the input information of the information to be emphasized, the conversion functions, and the emphasis functions, and an emphasized image output section that outputs the emphasized image.

Image forming apparatus

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Tokyo, Japan

Momoyo Enyama