Texas Instruments Corporation

Molly Nelis Sing

Simon Joshua Jacobs

Robert Floyd Payne

Kelly Jay Taylor

A digital micromirror device includes a plurality of micromirror cells on a semiconductor die. Each respective cell includes a memory circuit and an electrode selection circuit. At least some of the micromirror cells include a micromirror and each respective memory circuit controls a micromirror tilt angle. For a given memory circuit controlled to a first tilt angle, a measurement circuit measures a first value indicative of a capacitance between a first electrode and the micromirror and measures a second value indicative of a capacitance on the second electrode. For a second micromirror tilt angle, the measurement circuit measures a third value indicative of a capacitance between the first electrode and the micromirror and measures a fourth value indicative of a capacitance on the second electrode. The measurement circuit generates a signal indicative of whether the micromirror is stuck at a particular angle or missing.

Capacitive-based determination of micromirror status

In described examples, a MEMS device is enclosed within a sealed package including nonmetal oxide gasses at levels greater than 1% by volume. In at least one example, the MEMS device is protected against premature failure from various causes, including charging, particle growth and stiction by moieties of the nonmetal oxide gasses reacting with various exposed surfaces within the package of the MEMS device and/or the adsorbed water layers on said surfaces.

Gasses for increasing yield and reliability of MEMS devices

In described examples, a method of forming a microelectromechanical device comprises: forming a first metallic layer comprising a conducting layer on a substrate; forming a first dielectric layer on the first metallic layer, wherein the first dielectric layer comprises one or more individual dielectric layers; forming a sacrificial layer on the first dielectric layer; forming a second dielectric layer on the sacrificial layer; forming a second metallic layer on the second dielectric layer; and removing the sacrificial layer to form a spacing between the second dielectric layer and the first dielectric layer. Removing the sacrificial layer enables movement of the second dielectric layer relative to the first dielectric layer in at least one direction.

Growing community of inventors

Murphy, TX, United States of America

Molly Nelis Sing