Meta Platforms Technologies, LLC

Plessey Semiconductors Limited

Mohsin Aziz

Andrea Pinos

Jun-Youn Kim

Abdul Shakoor

Kevin Stribley

John Shannon

Samir Mezouari

Gary Charles Day

Anwer Saeed

Ian Murray

Ian Daniels

James Carswell

James Walker Carswell

According to the first aspect of the disclosure, a method of forming a light emitting device array precursor is provided. The method comprises forming a first light emitting layer on a first substrate, forming an array of first light emitting devices from the first light emitting layer, each first light emitting device configured to emit light having a first wavelength. A first bonding layer is formed on the first light emitting layer. A second light emitting layer is formed on a second substrate, the second light emitting layer configured to emit light having a second wavelength different to the first wavelength. A second bonding layer is formed on the second light emitting layer. The second bonding layer is bonded to a handling substrate, followed by removing the second substrate from the second light emitting layer. A third bonding layer is formed on the second light emitting layer on an opposite side of the second light emitting layer to the handling layer. The first bonding layer is bonded to the third bonding layer and the handling substrate is removed from the second light emitting layer. An array of second light emitting devices is formed from the second light emitting layer, the array of second light emitting devices aligned relative to the array of first light emitting devices such that they are spaced apart from each other in a plane parallel to each of the first and second light emitting layers.

Light emitting array

A light emitting diode is provided having a LED layer configured to emit pump light having a pump light wavelength from a light emitting surface, the LED layer comprising a plurality of Group III-nitride layers. A container layer is provided on the light emitting surface of the LED layer, the container surface including an opening defining a container volume through the container layer to the light emitting surface of the LED layer. A colour converting layer is provided in the container volume, the colour converting Got layer configured to absorb pump light and emit converted light of a converted light wavelength longer than the pump light wavelength. A lens is provided on the container surface over the opening, the lens having a convex surface on an opposite side of the lens to the colour converting layer. A pump light reflector laminate provided over the convex surface of the lens the pump light reflector laminate having a stop-band configured to reflect the pump light centred on a first wavelength.

Light emitting diode with improved colour purity

A micro-LED device and a method of fabricating the micro-LED device are disclosed. The method includes processing from a first side (e.g., p-side) of epitaxial layers of a micro-LED wafer to form individual mesa structures and a first solid metal bonding layer on the mesa structures, bonding a second solid metal bonding layer on a backplane wafer to the first solid metal bonding layer of the micro-LED wafer, removing the substrate of the micro-LED wafer and processing from a second side (e.g., n-side) of the epitaxial layers to isolate the solid metal bonding layers and form individual electrodes (e.g., anodes) for individual micro-LEDs, forming a dielectric material layer on surfaces in regions between the mesa structures, and depositing one or more metal materials in the regions between the mesa structures to form mesa sidewall reflectors and a common electrode for the micro-LEDs.

Small-pitch micro-LEDs

A light emitting diode (LED) precursor is provided. The LED precursor comprises a substrate (), an LED structure () comprising a plurality of Group III-nitride layers, and a passivation layer (). The LED structure comprises a p-type semiconductor layer (), an n-type semiconductor layer (), and an active layer () between the p-type and n-type semiconductor layers. Each of the plurality of Group III-nitride layers comprises a crystalline Group III-nitride. The LED structure has a sidewall () which extends in a plane orthogonal to a () crystal plane of the Group III-nitride layers. The passivation layer is provided on the sidewall of the LED structure such that the passivation layer covers the active layer. The passivation layer comprises a crystalline Group III-nitride with a bandgap higher than a bandgap of the active layer. The LED structure is shaped such that the sidewall of the LED structure is aligned with a non-polar crystal plane of each the Group III-nitride layers of the LED structure.

Light emitting diode precursor including a passivation layer

A micro-light emitting diode includes a substrate including at least a first portion of an n-type semiconductor layer, and a mesa structure on the substrate and characterized by a linear lateral dimension equal to or less than about 3 &#x3bc;m. The mesa structure includes a plurality of epitaxial layers, and a conductive distributed Bragg reflector (DBR) on the plurality of epitaxial layers. The conductive DBR includes a plurality of transparent conductive oxide layers and covers between about 80% and about 100% of a full lateral area of the plurality of epitaxial layers. The micro-LED also includes a dielectric layer on sidewalls of the mesa structure, a reflective metal layer on sidewalls of the dielectric layer and electrically coupled to the first portion of the n-type semiconductor layer, and a first metal electrode in direct contact with the conductive DBR.

Self-aligned ITO DBR based p-contact for small pitch micro-LED

A display device includes a plurality of light emitting diodes (LEDs) having walls that extend through a transparent semiconductor layer and beyond the surface of the transparent semiconductor layer. Each of the walls surrounds at least part of each of the plurality of LEDs to collimate the light emitted by the plurality of LEDs. In some embodiments, the walls collimate the light emitted by the LEDs by reflecting the light or absorbing a portion of the light. The display device may further include an array of optical lenses that faces the surface of the transparent semiconductor layer to further collimate the light emitted from the LEDs.

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Plymouth, United Kingdom

Mohsin Aziz