Asm America, Inc.

Asm IP Holding B.v.

Applied Materials, Inc.

Asm International N.v.

Asm IP Holdings B.v.

Mohith E Verghese

Eric James Shero

Carl Louis White

Kyle Fondurulia

Herbert Terhorst

David Marquardt

Jose Alexandro Romero

Todd Robert Dunn

Jan Willem Maes

Marko J Tuominen

Marko Peussa

Kunal Bhatnagar

Darko Babic

Ryan M Schmidt

Dan Maurice

Min Yan

Michael Eugene Givens

Petri Raisanen

John Kevin Shugrue

Srini Raghavan

Chang-Gong Wang

Timothy James Sullivan

Christophe Pomarede

Dmitrii Leshchev

Srinivas Gandikota

Seshadri Ganguli

Mandyam Sriram

Yixiong Yang

Jacqueline S Wrench

Jereld Lee Winkler

Yong Yang

Anthony Muscat

Shawn Miller

Embodiments of a solid chemical delivery system having a refillable sublimation vessel are provided herein. In some embodiments, a solid chemical delivery system includes: a refillable sublimation vessel including: a vessel body coupled to a vessel lid to define an interior volume of the refillable sublimation vessel, wherein the vessel lid includes a central refill port, a gas inlet port, and a gas outlet port; a flow restricting structure disposed in an upper portion of the interior volume; and a vertical appendage disposed in the interior volume and extending from a bottom plate of the vessel body; a refill cartridge removably coupled to the central refill port of the refillable sublimation vessel and having an internal volume therein; and a first valve disposed between the refillable sublimation vessel and the refill cartridge.

Refillable large volume solid precursor sublimation vessel

A semiconductor processing apparatus is disclosed. The apparatus may include a multiple chamber module comprising at least a first reaction chamber and a second reaction chamber, and a first substrate support structure disposed within the first reaction chamber and a second substrate support structure disposed within the second reaction chamber. The apparatus may also include a wafer handling chamber comprising a transfer robot configured for transferring two or more substrates along a first transfer path between the wafer handling chamber and the first substrate support structure and a second transfer path between the wafer handling chamber and the second substrate support structure. The apparatus may also include at least a first pyrometer and a second pyrometer, wherein a first optical path of the first pyrometer intersects the first transfer path and a second optical path of the second pyrometer intersect the second transfer path. Methods of monitoring and controlling a semiconductor processing apparatus are also disclosed.

Semiconductor processing apparatus and methods for monitoring and controlling a semiconductor processing apparatus

Methods of forming memory devices are described. A molybdenum silicide nucleation layer is formed, and the substrate is soaked in a titanium precursor prior to a bulk molybdenum gap fill process. In other embodiments, a molybdenum silicide film is formed in a first process cycle and a second process cycle is performed where the substrate is exposed to a titanium precursor. In further embodiments, a substrate having at least one feature thereon is exposed to a first titanium precursor and a nitrogen-containing reactant. The substrate is then soaked in a second titanium precursor, and then is exposed to a first molybdenum precursor followed by exposure to a silane to form a molybdenum silicide layer on a surface of the substrate.

Enhancing gapfill performance of dram word line

Methods for depositing molybdenum films on a substrate are described. The substrate is exposed to a molybdenum halide precursor and an aluminum precursor to form the molybdenum film (e.g., elemental molybdenum) at a low temperature. The exposures can be sequential or simultaneous.

Low temperature deposition of pure molybdenum films

Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port an outlet port, a manifold having a serpentine base creating a tortuous flow path and a filter media assembly in a bottom-fed configuration. The torturous flow path is defined by a plurality of elongate walls and a plurality of openings of the serpentine base ampoule, through which a carrier gas flows in contact with the precursor.

Bottom fed sublimation bed for high saturation efficiency in semiconductor applications

Herein disclosed are systems and methods related to solid source chemical vaporizer vessels and multiple chamber deposition modules. In some embodiments, a solid source chemical vaporizer includes a housing base and a housing lid. Some embodiments also include a first and second tray configured to be housed within the housing base, wherein each tray defines a first serpentine path adapted to hold solid source chemical and allow gas flow thereover. In some embodiments, a multiple chamber deposition module includes first and second vapor phase reaction chambers and a solid source chemical vaporizer vessel to supply each of the first and second vapor phase reaction chambers.

Reactant vaporizer and related systems and methods

Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port and an outlet port. The ampoules comprise an inlet plenum located between the inlet port and the cavity and an outlet plenum located between the outlet port and the cavity. A flow path is defined by a plurality of tubular walls and an ingress openings of the ampoule, through which a carrier gas flows in contact with the precursor.

Ampoule for a semiconductor manufacturing precursor

Low temperature deposition of pure molybenum films

Bottom-fed ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules comprise an outer cylindrical wall and an inner cylindrical wall defining a flow channel in between and a bottom wall having a top surface with a plurality of concentric elongate walls, each wall comprising an opening offset from the opening in adjacent walls defining a gas exchange zone through which a carrier gas flows in contact with the precursor.

Herein disclosed are systems and methods related to solid source chemical sublimator vessels and corresponding deposition modules. The solid source chemical sublimator can include a housing configured to hold solid chemical reactant therein. A lid may be disposed on a proximal portion of the housing. The lid can include a fluid inlet and a fluid outlet and define a serpentine flow path within a distal portion of the lid. The lid can be adapted to allow gas flow within the flow path. The solid source chemical sublimator can include a filter that is disposed between the serpentine flow path and the distal portion of the housing. The filter can have a porosity configured to restrict a passage of a solid chemical reactant therethrough.

Solid source sublimator

Multi-zone reactors, systems including a multi-zone reactor, and methods of using the systems and reactors are disclosed. Exemplary multi-zone reactors include a movable susceptor assembly and a moveable plate. The movable susceptor assembly and movable plate can move vertically between reaction zones of a reactor to expose a substrate to multiple processes or reactants.

Multi-zone reactor, system including the reactor, and method of using the same

Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate

Growing community of inventors

Phoenix, AZ, United States of America

Mohith E Verghese