Intermolecular, Inc.

Guardian Industries Corporation

Mohd Fadzli Anwar Hassan

Guowen Ding

Zhi-Wen Sun

Minh Le

Richard Blacker

Brent Boyce

Yu Wang

Yiwei Lu

Jingyu Lao

Hien Minh Huu Le

Muhammad Imran

Minh Anh Nguyen

Yongli Xu

Guizhen Zhang

Minh Anh Anh Nguyen

A method for making low emissivity panels, including control the composition of a barrier layer formed on a thin conductive silver layer. The barrier structure can include an alloy of a first element having high oxygen affinity with a second element having low oxygen affinity. The first element can include Ta, Nb, Zr, Hf, Mn, Y, Si, and Ti, and the second element can include Ru, Ni, Co, Mo, and W, which can have low oxygen affinity property. The alloy barrier layer can reduce optical absorption in the visible range, can provide color-neutral product, and can improve adhesion to the silver layer.

Silver barrier materials for low-emissivity applications

Coated articles are disclosed. The coated articles include a doped or alloyed silver layer sandwiched between two layers of transparent conductive oxide such as indium tin oxide (ITO). The doped silver or silver alloy layer can be thin, such as between 1. 5 to 20 nm and thus can be transparent. The doped silver or silver alloy can provide improved ductility property, allowing the conductive stack to be bendable. The transparent conductive oxide layers can also be thin, allowing the conductive stack can have improved ductility property.

Silver based conductive layer for flexible electronics

A bi-layer seed layer can exhibit good seed property for an infrared reflective layer, together with improved thermal stability. The bi-layer seed layer can include a thin zinc oxide layer having a desired crystallographic orientation for a silver infrared reflective layer disposed on a bottom layer having a desired thermal stability. The thermal stable layer can include aluminum, magnesium, or bismuth doped tin oxide (AlSnO, MgSnO, or BiSnO), which can have better thermal stability than zinc oxide but poorer lattice matching for serving as a seed layer template for silver (111).

Low-E glazing performance by seed structure optimization

Embodiments provided herein describe a low-e panel and a method for forming a low-e panel. A transparent substrate is provided. A metal oxide layer is formed over the transparent substrate. The metal oxide layer includes a first element, a second element, and a third element. A reflective layer is formed over the transparent substrate. The first element may include tin or zinc. The second element and the third element may each include tin, zinc, antimony, silicon, strontium, titanium, niobium, zirconium, magnesium, aluminum, yttrium, lanthanum, hafnium, or bismuth. The metal oxide layer may also include nitrogen.

Low-e panels with ternary metal oxide dielectric layer and method for forming the same

A transparent dielectric composition comprising tin, oxygen and one of aluminum or magnesium with preferably higher than 15% by weight of aluminum or magnesium offers improved thermal stability over tin oxide with respect to appearance and optical properties under high temperature processes. For example, upon a heat treatment at temperatures higher than 500 C, changes in color and index of refraction of the present transparent dielectric composition are noticeably less than those of tin oxide films of comparable thickness. The transparent dielectric composition can be used in high transmittance, low emissivity coated panels, providing thermal stability so that there are no significant changes in the coating optical and structural properties, such as visible transmission, IR reflectance, microscopic morphological properties, color appearance, and haze characteristics, of the as-coated and heated treated products.

Heat stable SnAl and SnMg based dielectrics

A method for making low emissivity panels, comprising forming a patterned layer on a transparent substrate. The patterned layers can offer different color schemes or different decorative appearance styles for the coated panels, or can offer gradable thermal efficiency through the patterned layers.

Methods and apparatuses for patterned low emissivity panels

Methods for making conducting stacks includes forming a doped or alloyed silver layer sandwiched between two layers of transparent conductive oxide such as indium tin oxide (ITO). The doped silver or silver alloy layer can be thin, such as between 1.5 to 20 nm and thus can be transparent. The doped silver or silver alloy can provide improved ductility property, allowing the conductive stack to be bendable. The transparent conductive oxide layers can also be thin, allowing the conductive stack to have an improved ductility property.

Low-E panels with ternary metal oxide dielectric layer and method for forming the same

Methods are provided to use data obtained from a single wavelength ellipsometer to determine the refractive index of materials as a function of wavelength for thin conductive films. The methods may be used to calculate the refractive index spectrum as a function of wavelength for thin films of metals, and conductive materials such as conductive metal nitrides or conductive metal oxides.

Method to extend single wavelength ellipsometer to obtain spectra of refractive index

Embodiments provided herein describe a low-e panel and a method for forming a low-e panel. A transparent substrate is provided. A metal oxynitride layer is formed over the transparent substrate. The metal oxynitride layer includes a first metal and a second metal. A reflective layer is formed over the transparent substrate.

Low-E panel with improved dielectric layer and method for forming the same

A method for forming boron oxide films formed using reactive sputtering. The boron oxide films are candidates as an anti-reflection coating. Boron oxide films with a refractive index of about 1.38 can be formed. The boron oxide films can be formed using power densities between 2 W/cmand 11 W/cmapplied to the target. The oxygen in the reactive sputtering atmosphere can be between 40 volume % and 90 volume %.

Low refractive index material by sputtering deposition method

A method for forming and protecting high quality bismuth oxide films comprises depositing a transparent thin film on a substrate comprising one of Si, alkali metals, or alkaline earth metals. The transparent thin film is stable at room temperature and at higher temperatures and serves as a diffusion barrier for the diffusion of impurities from the substrate into the bismuth oxide. Reactive sputtering, sputtering from a compound target, or reactive evaporation are used to deposit a bismuth oxide film above the diffusion barrier.

Method of generating high purity bismuth oxide

A method for forming a transparent conductive oxide (TCO) film for use in a TFPV solar device comprises the formation of a tin oxide film doped with between about 5 volume % and about 40 volume % antimony (ATO). Advantageously, the Sb concentration generally ranges from about 15 volume % to about 20 volume % and more advantageously, the Sb concentration is about 19 volume %. The ATO films exhibited almost no change in transmission characteristics between about 300 nm and about 1100 nm or resistivity after either a 15 hour exposure to water or an anneal in air for 8 minutes at 650 C, which indicated the excellent durability. Control sample of Al doped zinc oxide (AZO) exhibited degradation of resistivity for both a 15 hour exposure to water and an anneal in air for 8 minutes at 650 C.

Growing community of inventors

San Francisco, CA, United States of America

Mohd Fadzli Anwar Hassan