Alcatel Lucent

Alcatel

Avanex Corporation

Thales

Nokia Solutions and Networks Oy

Mohand Achouche

Romain Brenot

Vincent Etienne Houtsma

Nils Guenter Weimann

François Lelarge

Louis Giraudet

Genevieve Glastre Lemaitre

Stephane Demiguel

Mourad Chtioui

Christophe Caillaud

Hélène Debregeas

A uni-travelling carrier photodiode includes an absorption region of p-type doped material. The photodiode further includes a first collector layer and second collector layer wherein the absorption region is located between the first collector layer and the second collector layer.

Uni-travelling-carrier photodiode

A monolithic integrated structure comprising a buried heterostructure semiconductor optical amplifier and a deep ridge optical receiver comprising such structure are disclosed.

Monolithic integrated structure comprising a buried heterostructure semiconductor optical amplifier and a photodetector

An optical device includes a waveguide slab, first and second input port couplers, and first and second output port couplers located over a planar optical substrate. The waveguide slab has a plane of symmetry. The first and second input port couplers extend from the waveguide slab and have an input coupler pair axis located about midway between the first and second input port couplers. The input coupler pair axis is offset at a nonzero first distance from the plane of symmetry. The first and second output port couplers extend from the waveguide slab and have an output coupler pair axis located about midway between the first and second output port couplers. The output coupler pair axis is offset at a different nonzero second distance from the plane of symmetry.

Monolithic photonic integrated circuit

The field of the invention is that of optoelectronic devices for receiving high bit rate digital optical signals for telecommunications applications, comprising an optical amplifier and a photoreceiver diode. Generally, the two optical amplification and optical-electrical conversion functions are integrated in a common component, resulting in lower production costs, smaller footprint and improved reliability. To optimize the conversion device as a whole, it is demonstrated that there must be an active area of small thickness in the amplifier part and greater thickness in the conversion part. The invention proposes to implement this function by means of a structure comprising a diluted multimode waveguide common to the two amplification and reception sections, the first active area and the second area being disposed so as to ensure a coupling by evanescent waves with said diluted multimode waveguide.

Integrated optoelectronic device including a semiconductor optical amplifier and a photodiode

The present invention relates to a monolithic optical component () comprising a light-absorbing layer and a waveguide structure (). The invention is more particularly adapted to a monolithic component () comprising an evanescent coupling photodiode () integrated with the waveguide (). The monolithic optical component () comprises a light-absorbing layer and a waveguide () evanescently coupled with the light-absorbing layer, the waveguide () having one end coupled to an input face () of the component to receive an input wave, the 10 component () being characterized in that the input face is convex.

Monolithic optical component

Growing community of inventors

Marcoussis, France

Mohand Achouche