G.t. Equipment Technologies, Inc.

S.c. Fluids, Inc.

Gt Solar Incorporated

G.t. Equuipment Technologies Inc.

Mohan Chandra

Jonathan A Talbott

Ijaz H Jafri

Kedar Prasad Gupta

Michael A Costantini

Alleppey V Hariharan

Heiko D Moritz

Yuepeng Wan

Robert B Farmer

James A Tseronis

Vishwanath Prasad

David J Mount

Rick M Heathwaite

David F Bliss

Carl Chartier

Bernard D Jones

Rick C White

L Dolan Roman

Heiko D Mortiz

Glen Alan Burgess

Keith Matthei

David M Darling

Philippe Leyvraz

Allison Caster

Jim Boyd

A bulk silicon material for making silicon ingots, consisting of silicon pellets, and a method for making the pellets from an agglomerate-free source of high purity silicon powder by feeding a controlled amount of silicon powder that is free of intentional additives and binders into a pellet die, and dry compacting the powder at ambient temperature with pressure to produce a pellet that has a density of about 50&#x2013;75% of the theoretical density of elemental silicon, a weight within a range of about 1.0 gram to about 3.0 grams and preferably of about 2.3 grams, a diameter in the range of 10 mm to 20 mm and preferably of about 14 mm, and a height in the range of 5 mm to 15 mm and preferably of about 10 mm.

Dry conversion of high purity ultrafine silicon powder to densified pellet form for silicon melting applications

An apparatus for the automated measurement and recording of the electrical resistivity of a semiconductor boule or ingot using the method of four probes has a four point boule support grid is provided adjacent to the home position of a four tip probe which is equipped with three axis linear mobility, rotational capability, and computer control, to provide automated mapping and testing of an &ldquo;as grown&rdquo; or ground semiconductor boule with cropped ends, for obtaining and recording resistivity data.

Apparatus for automatically measuring the resistivity of semiconductor boules by using the method of four probes

A method for fabricating multi-cell solar devices using thermal spray deposition techniques to spray metal powder directly on solar cells and on the backing upon which solar cells are assembled, to form collection grid lines, bus bars, electrodes and interconnections between solar cells.

Making and connecting bus bars on solar cells

A continuous flow, steady state fluid delivery and recovery system for a process chamber and processes requiring supercritical fluid and desired additives including co-solvents, for conducting repetitive batch processing operations in an automated environment, for such processes as supercritical carbon dioxide cleaning and processing of semiconductor wafers. The system provides for steady-state operation of fluid flow and byproducts recovery while the process chamber is brought rapidly and repeatedly on and off line as in batch operations and for various process steps.

Supercritical fluid delivery and recovery system for semiconductor wafer processing

A dry process for the cleaning of precision surfaces such as of semiconductor wafers, by using process materials such as carbon dioxide and useful additives such as cosolvents and surfactants, where the process materials are applied exclusively in gaseous and supercritical states. Soak and agitation steps are applied to the wafer, including a rapid decompression of the process chamber after a soak period at higher supercritical pressure, to mechanically weaken break up the polymers and other materials sought to be removed, combined with a supercritical fluid flush to carry away the loose debris.

Supercritical fluid cleaning process for precision surfaces

A method for producing formed semiconductor articles with predefined shapes such as core tubes for CVD production of bulk polysilicon. The method is characterized by thermal spray deposition of the semiconductor material in a on a temperature controlled rotating mandrel that is shaped complementarily to the desired article shape, and by later separation of the formed semiconductor body from the mandrel by thermal contraction, melting, or chemical reduction of the mandrel size.

Method of producing shaped bodies of semiconductor materials

A pressure vessel for use in production processes requiring elevating and ranging of temperatures and pressures during the process cycle, readily adaptable to production line operation, suitable for wafer processing in the semiconductor industry and for other industries and processes. The pressure vessel is configured within an open support frame with a stationary, preferably inverted, orientation. The cover or closing plate is vertically movable towards the mouth of the pressure vessel and functions as the platform by which the object under process is transferred into the vessel. The moving and locking mechanism for the cover is isolated and shielded from the process environment.

Inverted pressure vessel with horizontal through loading

An inverted pressure vessel system for conducting automated industrial processes requiring elevated pressure and temperatures has a vertically movable pedestal for opening and closing the underside loading port, with pedestal drive system and locking mechanism located below the pedestal top and isolated from the chamber opening. The chamber is connectible to a pressure control and process fluid supply system, and has heat exchangers connected to an external source for temperature control. Process fluids are distributed across a central process cavity through divergent inflow and convergent outflow process fluid channels.

Inverted pressure vessel with shielded closure mechanism

A method for preparing a release coating and applying it to crucibles used to contain molten material while it solidifies, by mixing a release coating power with a dry organic binder into a powder and binder dry mixture, mixing a defoamer with a liquid into a liquid and defoamer mixture, mixing the dry mixture with the liquid and defoamer mixture into a wet release coating, sieving to remove lumps and particles, checking the viscosity, wet-spraying onto a crucible, evaporating the liquid from the wet release coating so as to leave a dry release coating on the crucible, and separating the binder from the dry release coating by thermal decomposition.

Release coating system for crucibles

A thermodynamically stable, protective coating layer is applied by thermal spray technique to the inner and outer surfaces of a quartz crucible used for mono or polycrystalline silicon crystallization processing, inhibiting fusion between the silicon melt and the vitreous silica of the crucible, contamination of the silicon melt by contaminants released from the crucible by devitrification, and any chemical reaction occurring between the crucible and any supporting graphite structure. A powdered form of a suitable protective coating material compatible with high temperature plasma spray techniques, such as magnesium zirconate, barium zirconate, or stabilized zirconium oxide, is fed into a high temperature and high speed plasma jet directed at the crucible. The powder particles are softened or melted in the jet and deposited on the surfaces of the quartz crucible, and allowed to cool and harden into a protective coating.

Protective layer for quartz crucibles used for silicon crystallization

A method and apparatus, and product by process, for the production of bulk polysilicon by a chemical vapor deposition process on a removable tube section. A quartz envelope and base plate form a CVD reactor enclosure, with external radiant heaters providing process heat through the wall of the reactor, and with process gas inlet and outlet ports located in the base plate. A tube section, preferably an EFG silicon tube-section, vertically emplaced on the base plate and capped to close the top is used as the reaction chamber. During the CVD process, deposition occurs on the inside surface of the chamber tube, the inner diameter of the deposit layer becoming increasingly smaller as the yield accumulates. In a two tube reactor, a smaller diameter, vertical middle tube is uniformly spaced and supported inside the chamber tube for fall flow of process gas over and under the middle tube so that deposition occurs on the three exposed tube surfaces. A co-axial core tube and heater mounted on the base plate provides yet more deposition surface area, improved thermal gradient in the reaction chamber, and greater thermal efficiency to the process. The full, double sided deposit on the middle tube and exterior deposit on the core tube are unique products of the process.

Cold wall reactor and method for chemical vapor deposition of bulk polysilicon

A method and apparatus for fabricating and drying wafers, including micro-electro-mechanical system (MEMS) structures, in a second, supercritical processing fluid environment. The apparatus utilizes an inverted pressure vessel connected to a supercritical processing fluid supply and recover system, with an internal heat exchanger connected to external heating and cooling sources, which is closed with a vertically movable base plate. A wafer cassette configured for supporting multiple wafers is submerged in a first processing fluid within a container, which is installed on the base plate for insertion into the pressure vessel. Vessel inlet and outlet tubes extend vertically downward from the ceiling of the pressure vessel to nearly the base plate. Container inlet and outlet tubes extend vertically downward from the ceiling of the pressure vessel to inside the container and nearly to the bottom of the container. The tubes provide for displacement of the first processing fluid with the second processing fluid still in a liquid state, from which it is raised to supercritical state.

Supercritical fluid drying system and method of use

A method and apparatus, and product by process, for the production of bulk polysilicon by broad area chemical vapor deposition, consisting of a quartz envelope and base plate forming a reactor enclosure, with external radiant heaters providing the heat source. A thin wall, edge-defined film fed growth (EFG) silicon tube section is used as the deposition casing and reaction chamber wall. The tube is capped at the top and sealed to the base plate to form the reaction chamber. External heaters radiate heat through the quartz enclosure to heat the tube wall to deposition temperature. A through flow of process gas is introduced to initiate the deposition. A uniform wide surface area deposit occurs on the inside surface of the tube, causing the diameter to become increasingly smaller as the yield accumulates. In a two tube reactor, a smaller core tube is uniformly spaced and supported inside the outer tube for full flow of process gas around the core tube so that deposition occurs on both the outside and inside surface of the core tube. The outer tube may be configured for preheating by a flow of electrical current from the base plate to the cover plate.

Method and apparatus for chemical vapor deposition of polysilicon

A slurry recycle process for use in free-abrasive machining operations such as for wire saws used in wafer slicing of ingots, where the used slurry is separated into kerf-rich and abrasive-rich components, and the abrasive-rich component is reconstituted into a makeup slurry. During the process, the average particle size of the makeup slurry is controlled by monitoring the condition of the kerf and abrasive components and making necessary adjustments to the separating force and dwell time of the separator apparatus. Related pre-separator and post separator treatments, and feedback of one or the other separator slurry output components for mixing with incoming used slurry and recirculation through the separator, provide further effectiveness and additional control points in the process. The kerf-rich component is eventually or continually removed; the abrasive-rich component is reconstituted into a makeup slurry with a controlled, average particle size such that the products of the free-abrasive machining method using the recycled slurry process of the invention are of consistent high quality with less TTV deviation from cycle to cycle for a prolonged period or series of machining operations.

Method and apparatus for improved wire saw slurry

The invention is an improved method and apparatus for growing crystals that incorporates an isolation valve between the growth and injection chambers to allow the growth chamber to be maintained at operating temperature and pressure while decoupling the injector chamber in order to make changes necessary to restart or advance the process. Separate heating elements in the injector assembly or chamber provide related heating control. Upper and lower load cells and programmable signal amplifiers are configured to weigh and output the dynamic weight range of the loss or gain of process materials of the growth chamber crucible and the injector assembly, and are connected by electrical slip rings or wireless means to a computer control system.

Growing community of inventors

Merrimack, NH, United States of America

Mohan Chandra