Kla Tencor Corporation

National Technology & Engineering Solutions of Sandia, LLC

Kla Corporation

Sandia Corporation

Mohammed Tahmassebpur

Salam Harb

Liqun Han

Marian Mankos

Gildardo Rios Delgado

Rudy Flores Garcia

Xinrong Jiang

Terry J Johnson

John Gerling

Tomas Plettner

John D Greene

Francis Chilese

Marco Arienti

Lennie Klebanoff

Sarah Scott

John David Gerling

Francis C Chilese

The present invention provides a local clean microenvironment near optical surfaces of an extreme ultraviolet (EUV) optical assembly maintained in a vacuum process chamber and configured for EUV lithography, metrology, or inspection. The system includes one or more EUV optical assemblies including at least one optical element with an optical surface, a supply of cleaning gas stored remotely from the one or more optical assemblies and a gas delivery unit comprising: a plenum chamber, one or more gas delivery lines connecting the supply of gas to the plenum chamber, one or more delivery nozzles configured to direct cleaning gas from the plenum chamber to a portion of the EUV assembly, and one or more collection nozzles for removing gas from the EUV optical assembly and the vacuum process chamber.

System and method for cleaning optical surfaces of an extreme ultraviolet optical system

A scanning electron microscopy (SEM) system includes a plurality of electron-optical columns and a plurality of electron beam sources. The electron beam sources include an emitter including one or more emitter tips configured to generate one or more electron beams of a plurality of electron beams. The electron beam sources include a stack of one or more positioners configured to adjust a position of the emitter based on one or more measurements of the electron beam generated by the emitter. The emitter is configured to scan the one or more electron beams across an area surrounding a bore of an electron-optical column of the plurality of electron-optical columns. The electron beam source array includes a carrier plate and a source tower. The source tower is configured to adjust a position of the plurality of electron beam sources relative to a position of the plurality of electron-optical columns.

Electron source architecture for a scanning electron microscopy system

A permanent-magnet particle beam apparatus and method incorporating a non-magnetic portion for tunability are provided. The permanent-magnet particle beam apparatus includes a particle beam emitter that emits a charged particle beam, and includes a set of permanent magnets forming a magnetic field for controlling condensing of the charged particle beam. The permanent-magnet particle beam apparatus further includes a non-magnetic electrical conductor component situated with the set of permanent magnets to control a kinetic energy of the charged particle beam moving through the magnetic field.

Permanent-magnet particle beam apparatus and method incorporating a non-magnetic metal portion for tunability

An apparatus for shielding a controlled pressure environment, including a shield assembly with: a gate disc arranged for location in a chamber and including a first continuous surface facing an opening in the chamber and including an outer circumference extending past the opening in a radial direction orthogonal to a longitudinal axis passing through the chamber and the opening; and an at least one actuator arranged to displace the gate disc in an axial direction parallel to the longitudinal axis. The opening is arranged for connection to an inlet of a vacuum pump. In an example embodiment, the thermal system attains and maintains thermal equilibrium in the chamber and/or to shields the chamber from unwanted thermal affects by heating or cooling the gate disc to offset cooling or heat generated by the vacuum pump. For example, the gate disc is cooled to offset heat generated by a turbo-molecular pump.

Apparatus and method for shielding a controlled pressure environment

A computer-implemented method for determining an optimized purge gas flow in a semi-conductor inspection metrology or lithography apparatus, comprising receiving a permissible contaminant mole fraction, a contaminant outgassing flow rate associated with a contaminant, a contaminant mass diffusivity, an outgassing surface length, a pressure, a temperature, a channel height, and a molecular weight of a purge gas, calculating a flow factor based on the permissible contaminant mole fraction, the contaminant outgassing flow rate, the channel height, and the outgassing surface length, comparing the flow factor to a predefined maximum flow factor value, calculating a minimum purge gas velocity and a purge gas mass flow rate from the flow factor, the contaminant mass diffusivity, the pressure, the temperature, and the molecular weight of the purge gas, and introducing the purge gas into the semi-conductor inspection metrology or lithography apparatus with the minimum purge gas velocity and the purge gas flow rate.

Method and system for gas flow mitigation of molecular contamination of optics

The present disclosure provides an electron beam column with substantially improved resolution and/or throughput for inspecting manufactured substrates. The electron beam column comprises an electron gun, a scanner, an objective lens, and a detector. In accordance with one embodiment, the electron gun includes a gun lens having a flip-up pole piece configuration. In accordance with another embodiment, the scanner comprises a dual scanner having a pre-scanner and a main scanner, and the detector may be configured between the electron gun and the pre-scanner. In accordance with another embodiment, the electron beam column includes a continuously-variable aperture configured to select a beam current. Other embodiments relate to methods of using an electron beam column for automated inspection of manufactured substrates. In one embodiment, for example, an aperture size is adjusted to achieve a minimum spot size given a selected beam current and a column-condition domain being used.

Electron-optical system for high-speed and high-sensitivity inspections

A novel technique is disclosed for varying a size of an aperture within a vacuum chamber. A drive mechanism within the vacuum chamber is used to adjust a partial horizontal overlap between at least two blades, wherein a perimeter of the aperture opening is defined by edges of said blades. In one embodiment, a variable aperture mechanism includes first and second blades attached to a first support, and third and fourth blades attached to a second support. The first blade is spaced vertically above the second blade on the first support; a second support, and the fourth blade is spaced vertically above the third blade on the second support. There is a partial horizontal overlap between the first and third blades and between the fourth and second blades, and the aperture opening has a perimeter defined by edges of the four blades. Other embodiments are also disclosed.

High-vacuum variable aperture mechanism and method of using same

An electrostatic chuck for retaining a substrate. The chuck has a clamping surface for receiving the substrate, where the clamping surface is formed of a hard polymeric material filled with carbon nanotubes. Electrodes are disposed beneath the clamping surface, for inducing localized electrostatic charges in the substrate and thereby retaining the substrate against the clamping surface. A base supports the clamping surface and the electrodes.

Electrostatic chuck

A method of forming a gate valve for use in a high vacuum environment of an electron gun by machining a core of non-magnetic nickel-chromium-molybdenum-iron-tungsten-silicon-carbon alloy that is weldable with nickel alloys and has a tensile strength of about 750 megapascals, machining a cladding of nickel-iron, welding the core to the cladding to form the gate valve, and machining the gate valve so as to remove any dimensional differences at an interface between the core and the cladding. In this manner, because the final mechanical tolerance is controlled by machining instead of part assembling, extremely high alignment accuracy is obtained. The final part provides field shielding as provided by the nickel alloy shell, low stray field provided by the non-magnetic alloy, good vacuum performance, and tight mechanical tolerance control. Also, because the alloy has the advantage of a low oxidation rate in comparison to stainless steel and titanium, there is less contamination buildup due to conditions such as electron beam bombardment.

Shielding, particulate reducing high vacuum components

A component for use in a high vacuum environment, the component including a core of non-magnetic Hastelloy with a cladding of nickel-iron covering the core at least in part. The component can be, for example, at least one of a gate valve for use in a high vacuum environment of an electron gun, a bearing, a slide way, a gate valve bearing, a rotary slide, a linear slide, an electron beam column, and electron beam chamber, and a vacuum chamber. In this manner, because the final mechanical tolerance is controlled by machining instead of part assembling, extremely high alignment accuracy is obtained. The final part provides field shielding as provided by the nickel alloy shell, low stray field provided by the non-magnetic Hastelloy, good vacuum performance, and tight mechanical tolerance control. Also, because Hastelloy has the advantage of a low oxidation rate in comparison to stainless steel and titanium, there is less contamination buildup due to conditions such as electron beam bombardment.

Growing community of inventors

San Ramon, CA, United States of America

Mohammed Tahmassebpur