Seagate Technology Incorporated

Mohammed Patwari

Eric Walter Singleton

Taras Grigorievich Pokhil

Konstantin Nikolaev

Jae-Young Yi

Andrzej Adam Stankiewicz

Victor Sapozhnikov

David A Deen

Vasudevan Ramaswamy

Jae-Young Li

Various embodiments of a magnetic stack are disclosed. In one or more embodiments, the magnetic stack includes first and second shield layers, and a magnetically responsive lamination disposed between the first and second shield layers. The magnetically responsive lamination can be configured to receive a sense current Itherethrough. The magnetic stack also includes a cooling element disposed between the first and second shield layers and thermally coupled to the magnetically responsive lamination. The cooling element can be configured to receive a bias current Itherethrough. And the cooling element can be configured to cool the magnetically responsive lamination during a read function.

Magnetic stack including cooling element

Implementations described and claimed herein provide a system comprising an external magnetic field generator, wherein the external field magnetic field generator is configured to rock an effective annealing magnetic field between a first positive angle and a second negative angle compared to a desired pinning field orientation in an AFM/PL structure.

Magnetic sensor annealing using a rocking field

A reader sensor having a dusting layer having a thickness less than 5 Angstroms between and in contact with the AFM layer and with the pinned layer. The dusting layer comprises a non-magnetic, electrically conducting material, such as ruthenium or iridium. The reader sensor has a free layer composed of a material free of nickel (Ni).

Sensor structure having increased thermal stability

A reader sensor that has a sensor stack with an AFM layer, a pinned stabilization layer, and a pinned layer, with the pinned stabilization layer closer to the AFM layer than to the pinned layer. The stack also includes a non-magnetic spacer layer between and in contact with the pinned stabilization layer and with the pinned layer. A magnetic coupling between the pinned stabilization layer and the pinned layer is no more than 50% of a magnetic coupling between the pinned stabilization layer and the AFM layer.

Sensor structure with pinned stabilization layer

Implementations disclosed herein provide a method comprising rocking an effective annealing magnetic field between a first positive angle and a second negative angle compared to a desired pinning field orientation in an AFM/PL structure, wherein an angular amplitude of rocking the effective annealing magnetic field between a first positive angle and a second negative angle gradually decreases towards the desired orientation of pinning in the AFM/PL structure.

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Eden Prairie, MN, United States of America

Mohammed Patwari