Ferro Corporation

Mohammed H Megherhi

Mike S H Chu

Walter J Symes, Jr

Willibrordus J L M J Coppens

Elisabeth W J Römer

Srinivasan Sridharan

George E Sakoske

Ellen Schwartz Tormey

John J Maloney

Yie-Shein Her

Daniel Edward McCauley

Knuth Albertsen

Jackie D Davis

Orville Washington Brown

Cody J Gleason

Stanley Wang

David L Widlewski

Nathaniel D Urban

Thomas Joseph Coffey

Elizabeth W Römer

Willibrordus J Coppens

Yie Shein Her

Peter Marley

A low K value, high Q value, low firing dielectric material and method of forming a fired dielectric material. The dielectric material can be fired below 950&#xb0; C. or below 1100&#xb0; C., has a K value of less than about 8 at 10-30 GHz and a Q value of greater than 500 or greater than 1000 at 10-30 GHz. The dielectric material includes, before firing a solids portion including 10-95 wt % or 10-99 wt % silica powder and 5-90 wt % or 1-90 wt % glass component. The glass component includes 50-90 mole % SiO, 5-35 mole % or 0.1-35 mole % BO, 0.1-10 mole % or 0.1-25 mole % AlO, 0.1-10 mole % KO, 0.1-10 mole % NaO, 0.1-20 mole % LiO, 0.1-30 mole % F. The total amount of LiO+NaO+KO is 0.1-30 mole % of the glass component. The silica powder can be amorphous or crystalline.

Low K dielectric compositions for high frequency applications

A slurry composition for use in chemical-mechanical polishing sapphire substrates and includes an alkaline pH adjuster and an accelerant.

Slurry composition and method of use

Multilayer ceramic chip capacitors which satisfy COG requirements and which are compatible with reducing atmosphere sintering conditions so that non-noble metals such as nickel and nickel alloys thereof may be used for internal and external electrodes are made in accordance with the invention. The capacitors exhibit desirable dielectric properties (high capacitance, low dissipation factor, high insulation resistance), excellent performance on highly accelerated life testing, and very good resistance to dielectric breakdown. The dielectric layers comprise a strontium zirconate matrix doped with other metal oxides such as TiO, MgO, BO, CaO, AlO, SiO, and SrO in various combinations.

COG dieletric composition for use with nickel electrodes

COG dielectric composition for use with nickel electrodes

Multilayer ceramic chip capacitors which satisfy Y5V requirements and which are compatible with reducing atmosphere sintering conditions so that non-noble metals such as nickel, copper, and alloys thereof may be used for internal and external electrodes are made in accordance with the invention. The capacitors exhibit desirable dielectric properties (high capacitance, low dissipation factor, high insulation resistance), excellent performance on highly accelerated life testing, and very good resistance to dielectric breakdown. The dielectric layers comprise BaTiOdoped with other metal oxides such as MgO, CaO, ZnO, MnO, ZrO, SiO, NdO, NbO, and YO.

Y5V dielectric composition

Multilayer ceramic chip capacitors which satisfy COG requirements and which are compatible with reducing atmosphere sintering conditions so that non-noble metals such as copper and copper alloys thereof may be used for internal and external electrodes are made in accordance with the invention. The capacitors exhibit desirable dielectric properties (high capacitance, low dissipation factor, high insulation resistance), excellent performance on highly accelerated life testing, and very good resistance to dielectric breakdown. The dielectric layers comprise a composite oxide formed by calcining rare earth titanates, barium titanate, together with other metal oxides such as MgO, CaO, ZnO, MnO, ZrO, SiO, GaO, NdO, NbO, and YO.

COG dielectric composition for use with copper electrodes

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Victor, NY, United States of America

Mohammed H Megherhi