University of California

King Abdullah University of Science and Technology

Unist-academy Industry Research Corporation

Mohammed Fouda

Ahmed Mohamed Eltawil

Fadi Joseph Kurdahi

Zhiying Wang

Gi Ju Jung

Su Gil Lee

Marwen Zorgui

Jong Eun Lee

A stuck-at fault mitigation method for resistive random access memory (ReRAM)-based deep learning accelerators, includes: confirming a distorted output value (Y0) due to a stuck-at fault (SAF) by using a correction data set in a pre-trained deep learning network, by means of ReRAM-based deep learning accelerator hardware; updating an average (&#x3bc;) and a standard deviation (&#x3c3;) of a batch normalization (BN) layer by using the distorted output value (Y0), by means of the ReRAM-based deep learning accelerator hardware; folding the batch normalization (BN) layer in which the average (&#x3bc;) and the standard deviation (&#x3c3;) are updated into a convolution layer or a fully-connected layer, by means of the ReRAM-based deep learning accelerator hardware; and deriving a normal output value (Y1) by using the deep learning network in which the batch normalization (BN) layer is folded, by means of the ReRAM-based deep learning accelerator hardware.

Stuck-at fault mitigation method for ReRAM-based deep learning accelerators

Disclosed are various approaches for a controller that can generate and use non-stationary polar codes for encoding and decoding information. In one example, a method includes performing, by an encoder of the controller, a linear operation on at least one vector of information to be stored in a memory. The linear operation includes generating a polar encoded representation from the at least one vector of information. The linear operation also includes generating an output using at least one permutation that is based on a statistical characterization analysis of channels of the memory and a channel dependent permutation that is applied to the polar encoded representation. In some aspects, the statistical characterization analysis includes a respective reliability level of each one of the plurality of channels, and the channel dependent permutation includes an ordered permutation that orders the channels according to their respective reliability level.

Non-stationary polar codes for resistive memories

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Irvine, CA, United States of America

Mohammed Fouda