Alliedsignal Inc.

Honeywell International Inc.

Allied Corporation

Mohammed A Fathimulla

Matthew H Luly

Timothy R Demmin

Thomas C Loughran

Thomas R Keyser

William L Larson

Cheisan J Yue

Eric E Vogt

Warren P Reif

David R Urech

A varactor has a plurality of alternating P&#x2212; wells and N+ regions formed in a silicon layer. Each of the P&#x2212; wells forms a first N+/P&#x2212; junction with the N+ region on one of its side and a second N+/P&#x2212; junction with the N+ region on the other of its sides. A gate oxide is provided over each of the P&#x2212; wells, and a gate silicon is provided over each of the gate oxides. The potential across the gate silicons and the N+ regions controls the capacitance of the varactor.

Varactor with improved tuning range

An RF semiconductor device is fabricated from a starting substrate comprising a polysilicon handle wafer, a buried oxide layer over the polysilicon handle wafer, and a silicon layer over the oxide layer.

Silicon-on-insulator wafer for RF integrated circuit

Method of etching and cleaning using fluorinated carbonyl compounds

Method of etching using hydrofluorocarbon compounds

A method of etching comprising subjecting a material under plasma etching conditions to an etching composition comprising at least an etchant compound having the formula C.sub.X H.sub.C F.sub.Z

InP is etched by reactive ion etching using a mixture of SiCl.sub.4 and CH.sub.4 or a mixture of SiCl.sub.4 and H.sub.2. A mask is placed on the InP and then it is placed into a RIE chamber having a pressure between approximately 5 mTorr and approximately 50 mTorr. The InP substrate is etched at a substrate temperature of less than 150.degree. C.

Method for etching indium based III-V compound semiconductors

A two dimensional distributed amplifier phase shifter having a distributed reference amplifier circuit generating a reference signal, the reference amplifier circuit having its input connected to one end of a plurality of serially connected microstrip transmission lines. The phase shifter further has a plurality of phase shifted amplifier circuits, one associated with each of the microstrip transmission lines. Each phase shifted amplifier circuit has an input connected to an end of its associated microstrip transmission line which is opposite the reference amplifier circuit and generates an output signal, phase shifted from the reference signal or the output signal of an adjacent phase shifted amplifier by a predetermined phase angle. The phase shifter may be fabricated as a monolithic microwave integrated circuit.

Two dimensional distributed amplifier having multiple phase shifted

A method for forming a submicron width metal line on a substrate is described incorporating the steps of coating a substrate with a layer of photoresist, baking the layer, exposing the layer to a pattern, soaking the layer in a solution including chlorobenzene, developing the layer to form openings, baking the photoresist to remove any residual chlorobenzene, exposing the layer to deep ultraviolet radiation, baking the layer to cause the layer to flow at the edges of the openings, depositing metal on the layer and on the substrate, and dissolving the layer to lift off the metal disposited on the layer whereby the metal deposited on the substrate remains. The invention overcomes the problem of forming submicron width metal lines from one micron openings in a photoresist layer.

Single step lift-off technique for submicron gates

A monolithic programmable signal processor with piezoelectric insulator FETs and an InP substrate. The piezoelectric insulator FETs are capable of being constructed on the same substrate with circuits associated with the signal processor and optical components.

Growing community of inventors

Ellicott City, MD, United States of America

Mohammed A Fathimulla