Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Mohammad Tollabi Mazraehno

Alexander F Pfeuffer

Hans-Jürgen Lugauer

Alvaro Gomez-Iglesias

Peter Stauß

Mariel Grace Jama

In an embodiment an optoelectronic semiconductor component includes a first semiconductor layer of an n-conductivity type, the first semiconductor layer being of AlGaN composition, with 0.3≤x≤0.95, a second semiconductor layer of a p-conductivity type, an active zone between the first semiconductor layer and the second semiconductor layer, the active zone including a quantum well structure and an intermediate layer between the first semiconductor layer and the active zone, wherein the intermediate layer includes a semiconductor material of AlGaN composition, with x*1.05≤y≤1, and wherein the intermediate layer is located directly adjacent to the active zone.

Optoelectronic semiconductor component having an intermediate layer and method for producing the optoelectronic semiconductor component

In an embodiment, an optoelectronic semiconductor component includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, wherein a respective semiconductor material of the first and second semiconductor layers are each a compound semiconductor material including a first, a second and a third composition element, and a second contact region configured to electrically contact the second semiconductor layer, wherein the first semiconductor layer is patterned and arranged over the second semiconductor layer, wherein the second contact region is arranged between patterned regions of the first semiconductor layer, wherein the second contact region comprises a second metallic contact layer and a semiconductor contact layer between the second metallic contact layer and the second semiconductor layer, wherein a semiconductor material of the semiconductor contact layer includes the first, second and third composition elements, and wherein a concentration of the first and second composition elements varies from a position on a side of the second semiconductor layer to a position on a side of the second metallic contact layer.

Optoelectronic semiconductor component having a semiconductor contact layer and method for producing the optoelectronic semiconductor component

A component for detecting UV radiation and a method for producing a component are disclosed. In an embodiment a component includes a semiconductor body including a first semiconductor layer, a second semiconductor layer and an intermediate active layer located therebetween, wherein the semiconductor body is based on AlGaInN with 0&#x2264;n&#x2264;1, 0&#x2264;m&#x2264;1 and n+m&#x3c;1, wherein the first semiconductor layer is n-doped, wherein the second semiconductor layer is p-doped, wherein the active layer is formed with respect to its material composition in such a way that during operation of the component, arriving ultraviolet radiation is absorbed by the active layer for generating charge carrier pairs, wherein the active layer is relaxed with respect to its lattice constant, and wherein the first semiconductor layer is strained with respect to its lattice constant.

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Jena, Germany

Mohammad Tollabi Mazraehno