Infineon Technologies Ag

Mohammad Momeni

Hans-Joachim Schulze

Francisco Javier Santos Rodriguez

Helmut Oefner

Reinhard Ploss

Nico Caspary

A semiconductor device includes: a semiconductor substrate having a first side, a second side opposite the first side, and a thickness; at least one semiconductor component integrated in the semiconductor substrate; a first metallization at the first side of the semiconductor substrate; and a second metallization at the second side of the semiconductor substrate. The semiconductor substrate has an oxygen concentration along a thickness line of the semiconductor substrate which has a global maximum at a position of 20% to 80% of the thickness relative to the first side. The global maximum is at least 2-times larger than the oxygen concentrations at each of the first side and the second side of the semiconductor substrate.

Semiconductor device having a defined oxygen concentration

A method for manufacturing a substrate waferincludes providing a device wafer () having a first side () and a second side (); subjecting the device wafer () to a first high temperature process for reducing the oxygen content of the device wafer () at least in a region () at the second side (); bonding the second side () of the device wafer () to a first side () of a carrier wafer () to form a substrate wafer (); processing the first side () of the substrate wafer () to reduce the thickness of the device wafer (); subjecting the substrate wafer () to a second high temperature process for reducing the oxygen content at least of the device wafer (); and at least partially integrating at least one semiconductor component () into the device wafer () after the second high temperature process.

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Villach, Austria

Mohammad Momeni