Intel Corporation

Mohammad Mehedi Hasan

Anand S Murthy

Biswajeet Guha

Nicholas G Minutillo

Ryan Keech

Gianfranco Gerosa

Suresh Vishwanath

Mohammed Hasan Taufique

Harmander Singh

Subrina Rafique

Abhiman Pratap Kotwal

Integrated circuit structures having source or drain structures with abrupt dopant profiles are described. In an example, an integrated circuit structure includes a vertical arrangement of horizontal nanowires. A gate stack is around the vertical arrangement of horizontal nanowires. A first epitaxial source or drain structure is at a first end of the vertical arrangement of horizontal nanowires. A second epitaxial source or drain structure is at a second end of the vertical arrangement of horizontal nanowires. The first and second epitaxial source or drain structures include silicon, phosphorous and arsenic, with an atomic concentration of phosphorous substantially the same as an atomic concentration of arsenic.

High aspect ratio source or drain structures with abrupt dopant profile

Described is an apparatus comprising: a voltage level detector to monitor a first power supply node; and a voltage level protector, coupled to the voltage level detector, to protect the voltage level detector from receiving a power supply on the first power supply node above a pre-defined threshold voltage. Described is also a voltage level protector to protect a first power supply node from receiving a power supply above a pre-defined threshold voltage, the voltage level protector comprising: a first p-type device coupled to a second power supply node, the second power supply node to receive a power supply higher than the power supply on the first power supply node; and a second p-type device coupled in series to the first p-type device, the second p-type further coupled to the first power supply node, which is for coupling to a voltage level detector.

Voltage detector with high voltage protection

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Austin, TX, United States of America

Mohammad Mehedi Hasan