Intel Corporation

Advanced Micro Devices Corporation

Mohammad M Farahani

Nachiket R Raravikar

Neha M Patel

Vladimir Noveski

Gregory Martin Chrysler

Kris Frutschy

Franklin D Crawford, Jr

Ross Hartshorn

A method for fabricating a microelectronic assembly including a built-in TEC, a microelectronic assembly including a built-in TEC, and a system including the microelectronic assembly. The method includes providing a microelectronic device, and fabricating the TEC directly onto the microelectronic device such that there is no mounting material between the TEC and the microelectronic device.

Microelectronic assembly including built-in thermoelectric cooler and method of fabricating same

A stress sensor is disclosed herein. The stress sensor includes a plurality of carbon nanotubes in a substrate, and first and second contacts electrically connectable with the plurality of carbon nanotubes. Methods of making and using the stress sensor are also disclosed.

Stress sensor for in-situ measurement of package-induced stress in semiconductor devices

Various methods of manufacturing, including oxide film manufacturing, are provided. In one aspect, a method of fabricating an oxide film is provided that includes forming a trench in a semiconductor substrate and exposing the substrate to an oxidizing atmosphere containing oxygen but substantially no chlorine. The substrate is heated to react a surface of the trench with the oxidizing atmosphere to form the oxide film thereon. Chlorine induced oxide-silicon interface voids may be eliminated.

Elimination of voids at the oxide/silicon interface in trench-based structures

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Austin, TX, United States of America

Mohammad M Farahani