University of Rochester

Mohammad Kazemi

Eby G Friedman

Engin Ipek

Ravi Patel

Isaac Richter

Xiaochen Guo

Kamil Pas

Ji Liu

A method of controlling a trajectory of a perpendicular magnetization switching of a ferromagnetic layer using spin-orbit torques in the absence of any external magnetic field includes: injecting a charge current Jthrough a heavy-metal thin film disposed adjacent to a ferromagnetic layer to produce spin torques which drive a magnetization M out of an equilibrium state towards an in-plane of a nanomagnet; turning the charge current Joff after tseconds, where an effective field experienced by the magnetization of the ferromagnetic layer His significantly dominated by and in-plane anisotropy H, and where M passes a hard axis by precessing around the H; and passing the hard axis, where His dominated by a perpendicular-to-the-plane anisotropy H, and where M is pulled towards the new equilibrium state by precessing and damping around H, completing a magnetization switching.

Switching of perpendicularly magnetized nanomagnets with spin-orbit torques in the absence of external magnetic fields

A base element for switching a magnetization state of a nanomagnet includes a heavy-metal nanostrip having a surface. A ferromagnetic nanomagnet is disposed adjacent to the surface. The ferromagnetic nanomagnet includes a shape having a long axis and a short axis. The ferromagnetic nanomagnet has both a perpendicular-to-the-plane anisotropy Hand an in-plane anisotropy Hand the ferromagnetic nanomagnet has a first magnetization equilibrium state and a second magnetization equilibrium state. The first magnetization equilibrium state or the second magnetization equilibrium state is settable by a flow of electrical charge through the heavy-metal nanostrip. A direction of flow of the electrical charge through the heavy-metal nanostrip includes an angle &#x3be; with respect to the short axis of the nanomagnet.

A base element for switching a magnetization state of a nanomagnet includes a heavy-metal strip having a surface. A ferromagnetic nanomagnet is disposed adjacent to the surface. The ferromagnetic nanomagnet has a first magnetization equilibrium state and a second magnetization equilibrium state. The first magnetization equilibrium state or the second magnetization equilibrium state is settable in an absence of an external magnetic field by a flow of electrical charge through the heavy-metal strip. A method for switching a magnetization state of a nanomagnet is also described.

An integrated logic device includes a channel having an interconnect section and a pair of spin-orbit segments connected to the interconnect section at either end of the interconnect section. A P structure includes a P magnet disposed on a surface of a spin-orbit segment. A tunneling barrier is disposed between the P magnet and a Rp magnetic reference layer. A Q structure includes a Q magnet disposed on a surface of the other spin-orbit segment. A tunneling barrier is disposed between the Q magnet and a Rq magnetic reference layer. A method of integrated logic spin-orbit perpendicular-anisotropy (SOPE) gate device operation is also described.

Method of electrical reconfigurability and an electrical reconfigurable logic gate device instrinsically enabled by spin-orbit materials

Presented is a method and apparatus for solving. The method includes receiving, by a resistive memory array, a first data, the resistive memory array comprising a plurality of cells, wherein the receiving comprises setting a plurality of resistances on the plurality of cells, wherein each of the plurality of resistances are based on the first data. The method further includes receiving, by the resistive memory array, a second data, wherein the receiving comprises applying at least one of a current and a voltage based on the second data on the plurality of cells. The method still further includes determining, by the resistive memory array, an initial unknown value, the initial value based on the first data and the second data.

Resistive memory accelerator

A method includes receiving, by a resistive memory array, a first data, the resistive memory array comprising a plurality of cells, wherein the receiving comprises setting a plurality of resistances on the plurality of cells, wherein each of the plurality of resistances are based on the first data. The method further includes receiving, by the resistive memory array, a second data, wherein the receiving comprises applying at least one of a current and a voltage based on the second data on the plurality of cells. The method still further includes determining, by the resistive memory array, an initial unknown value, the initial value based on the first data and the second data.

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Rochester, NY, United States of America

Mohammad Kazemi