Ford Motor Company Limited

Michigan State University

Smiths Industries Aerospace & Defense Systems, Inc.

Mohammad Aslam

Richard E Soltis

Eleftherios M Logothetis

Jerry L Page

Michael D Olinger

Michael Alan Tamor

James V Beck

A force detecting microsensor comprises a single crystal Si substrate, a single crystal cone formed on the substrate and a resilient electrode mounted above the tip of the Si cone. The space between the tip of the Si cone and the resilient electrode is maintained in a vacuum environment and the distance between the tip and the resilient anode is in the order of a few atomic diameters. The tunneling effect of electrons occurs between the tip of the Si cone and the resilient electrode when a potential is applied to the resilient electrode and the Si cone tip. The resilient electrode deflects as a result of the force acting on the microsensor. The deflection of the resilient electrode alters the electrical characteristics between the resilient electrode and the Si cone tip. The changes in the electrical characteristics can be measured to determine the level of force acting on the microsensor. The process for making the microsensor according to the invention comprises the steps of forming an insulating layer and support layer on the substrate, forming a recess in the insulating layer and aperture in the support layer, depositing a single crystal Si cone on the substrate and fully enclosing the Si cone within the recess of the support layer and the insulating layer.

Force detecting sensor and method of making

Novel structures are provided including laminated layers of the diamond film in different patterns for conducting, generating and/or absorbing thermal energy. In particular, a thermal sensor/heater is shown including a doped electrically conductive diamond film layer encapsulated by layers of undoped electrically insulative layers on a silicon wafer. Also, a GaAs/Si on diamond laminate structure is provided in which the diamond film acts as a substrate and a heat sink. Notably, the diamond film structures are characterized by their high thermal conductivity, high chemical resistance, and high hardness/wear resistance due to the properties of the diamond films.

Diamond film structures and methods related to same

Methods for seeding and growing diamond films on planar and non-planar surfaced substrates and also for patterning the diamond films include mixing submicron diameter diamond particles and binder particles in carriers such as photoresist or water, and applying the mixture to a substrate surface. Treatment of the substrate by chemical vapor deposition then removes the carrier and grows the dispersed diamond particles into a diamond film. Notably, diamond particles having an average size of 25 nanometers form a particularly desirable mixture since the particles do not tend to settle out of the mixture, and also since these particles result in smooth diamond films. The mixtures can be applied onto non-planar surfaces by spraying, dipping, or dispensing and jet writing, and can be applied to planar and non-planar surfaces as a complete coating, as a line, or as a pattern. Patterning of the mixture, either when applying the mixture to a substrate or after applying the mixture, allows the formation of novel structures.

Method of seeding diamond

Method of making a force detecting sensor

Methods for making mechanical and micro-electromechanical devices (a) forming a mold having a base and metallic walls defining a molding space therebetween, the base being exposed between the metallic walls and either being capable of or having a nucleating upper surface capable of nucleating the deposition of a structural material which does not nucleate on or adhere to the metallic walls at conditions of deposition; (b) depositing a structural material onto either the nucleating upper surface or base and filling to a predetermined height to form a strong solid body; and (c) removing the metallic walls, leaving free-standing, solid body walls of structural material attached to the base; another embodiment of the method may include step (a) and steps (b) filling the molding space with a diamond-nucleating material; (c) consolidating the diamond-nucleating material so as to form a strong solid body; and (d) removing the metallic walls, and thereby freeing the solid body, by dissolving the metallic walls with an agent, normally a liquid.

Method for making mechanical and micro-electromechanical devices

This invention is directed to a method of preparing a superconducting metal oxide film on a substrate. More particularly, the method comprises depositing a superconducting metal oxide precursor film on the substrate and then subjecting it to annealing in an oxygen nitrogen atmosphere followed by annealing in an oxygen atmosphere, followed by rapid cooling, according to schedule wherein the time and temperature are critically defined.

Preparation of superconducting oxide films using a pre-oxygen nitrogen

This invention is directed to a method of preparing a superconducting metal oxide film on silicon and silicon dioxide substrates. More particularly, the method comprises depositing by physical vapor deposition a superconducting metal oxide precursor directly on the substrate and then subjecting it to rapid thermal annealing in an oxygen atmosphere.

Growing community of inventors

Okemos, MI, United States of America

Mohammad Aslam