Drexel University

Mohammad Anwarul Islam

Jonathan Eli Spanier

Zongquan Gu

Coupling of switchable ferroelectric polarization with the carrier transport in an adjacent semiconductor enables a robust, non-volatile manipulation of the conductance in a host of low-dimensional systems, including the two-dimensional electron liquid that forms at the LaAlO&#x2014;SrTiOinterface. However, the strength of the gate-channel coupling is relatively weak, limited in part by the electrostatic potential difference across a ferroelectric gate. Compositionally grading of PbZrTiOferroelectric gates enables a more than twenty-five-fold increase in the LAO/STO channel conductance on/off ratios. Incorporation of polarization gradients in ferroelectric gates can enable significantly enhanced performance of ferroelectric non-volatile memories.

Growing community of inventors

Warners, NY, United States of America

Mohammad Anwarul Islam