Beneq Oy

Mohammad Ameen

Pekka T Soininen

Vasil Vorsa

The invention relates to a method for fabricating a plasma etch-resistant film () on a surface of a substrate (), wherein the method comprises the step of forming a film comprising an intermediate layer () of rare earth metal oxide, rare earth metal carbonate, or rare earth metal oxycarbonate, or any mixture thereof on a first layer () of rare earth metal oxide, wherein the rare earth metal is the same in the first layer and in the intermediate layer. The invention further relates to a plasma etch-resistant film and to the use thereof.

Plasma etch-resistant film and a method for its fabrication

The invention relates to a method for fabricating a plasma etch-resistant film () on a surface of a substrate (), wherein the method comprises the step of forming a film comprising an intermediate layer () of rare earth metal oxide, rare earth metal carbonate, or rare earth metal oxycarbonate, or anymixture thereof on a first layer () of rare earth metal oxide, wherein the rare earth metal is the same in the first layer and in the intermediate layer. The invention further relates to a plasma etch-resistant film and to the use thereof.

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Telford, PA, United States of America

Mohammad Ameen