Stmicroelectronics S.r.l.

Mohammad Abbasi Gavarti

Daniele Caltabiano

Giuditta Roselli

Anna Angela Pomarico

Francesco Braghin

Roberto Brioschi

Andrea Picco

Bruno Murari

Domenico Giusti

Elio Guidetti

Marco Omar Ghidoni

Gabriele Bertagnoli

A device includes: a micromechanical sensing structure configured to provide an electrical detection quantity as a function of a load; and a package enclosing the micromechanical sensing structure and providing a mechanical and electrical interface with respect to an external environment. The package includes a housing structure defining a cavity housing the micromechanical sensing structure; and a package coating that coats, at least in part, the housing structure, the package coating including a mechanical interface configured to transfer, in a uniform manner, the load on the housing structure and on the micromechanical sensing structure, wherein the housing structure includes a deformable layer interposed and in contact between the micromechanical sensing structure and the package coating, and wherein the deformable layer defines a mechanical-coupling interface.

High-range semiconductor load sensor device

A microelectromechanical transducer includes a semiconductor body having first and second surfaces opposite to one another. A plurality of trenches extend in the semiconductor body from the first surface towards the second surface, including a first pair of trenches having a respective main direction of extension along a first axis, and a second pair of trenches having a respective main direction of extension along a second axis orthogonal to the first axis. A first piezoresistive sensor and a second piezoresistive sensor extend at the first surface of the semiconductor body respectively arranged between the first and second pair of trenches. The first piezoresistive sensor, the second piezoresistive sensor and the plurality of trenches form an active region. A first structural body is mechanically coupled to the first surface of the semiconductor body to form a first sealed cavity which encloses the active region.

Multi-axial force sensor including piezoresistive groups, method of manufacturing the multi-axial force sensor, and method for operating the multi-axial force sensor

A microelectromechanical force/pressure sensor has: a sensor die, of semiconductor material, having a front surface and a bottom surface, extending in a horizontal plane, and made of a compact bulk region having a thickness along a vertical direction, transverse to the horizontal plane; piezoresistive elements, integrated in the bulk region of the sensor die, at the front surface thereof; and a cap die, coupled above the sensor die, covering the piezoresistive elements, having a respective front surface and bottom surface, opposite to each other along the vertical direction, the bottom surface facing the front surface of the sensor die. A conversion layer is arranged between the front surface of the sensor die and the bottom surface of the cap die, patterned to define a groove traversing its entire thickness along the vertical direction; the piezoresistive elements are arranged vertically in correspondence to the groove and the conversion layer is designed to convert a load applied to the front surface of the cap die and/or bottom surface of the sensor die along the vertical direction into a planar stress distribution at the groove, acting in the horizontal plane.

Microelectromechanical scalable bulk-type piezoresistive force/pressure sensor

A stress sensor formed by a membrane plate; a first bonding region arranged on top of the membrane plate; a cover plate arranged on top of the first bonding region, the first bonding region bonding the membrane plate to the cover plate; three-dimensional piezoresistive elements extending across the membrane plate that are embedded in the bonding layer; and planar piezoresistive elements that extend across the membrane plate and are surrounded by and separated from the bonding layer.

Stress sensor for monitoring the health state of fabricated structures such as constructions, buildings, infrastructures and the like

In an embodiment of the present invention, a load sensor package includes a housing having a cap, a column, a peripheral structure, and a base. The base includes a major surface configured to mount a stress sensor, while the cap includes a cap major surface configured to receive a load to be measured. The column is configured to transfer a predetermined fraction of the load to be measured to the base through the stress sensor. The peripheral structure is configured to transfer the remaining fraction of the load to be measured to the base.

Load sensing devices, packages, and systems

A microelectromechanical transducer includes: a semiconductor body, having a first surface and a second surface opposite to one another; a first structural body, coupled to the first surface of the semiconductor body; a first sealed cavity between the semiconductor body and the first structural body; and an active area housed in the first sealed cavity, including at least two trenches and a sensor element between the trenches. The trenches extend along a vertical direction from the first surface towards the second surface of the semiconductor body.

Trench-based microelectromechanical transducer and method for manufacturing the microelectromechanical transducer

A load-sensing device is arranged in a package forming a chamber. The package has a deformable substrate configured, in use, to be deformed by an external force. A sensor unit is positioned in direct contact with the deformable substrate and is configured to detect deformations of the deformable substrate. An elastic element within of the chamber is arranged to act between the package and the sensor unit to generate, on the sensor unit, a force keeping the sensor unit in contact with the deformable substrate. The deformable substrate may be a base of the package, and the elastic element may be a metal lamina arranged between the lid of the package and the sensor unit. The sensor unit may be a semiconductor die integrating piezoresistors.

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Milan, Italy

Mohammad Abbasi Gavarti