Asml Holding N.v.

Asml Netherlands B.v.

Asml Holding N.v. & Asml Netherlands B.v.

Asml Netherlands B.v. & Asml Holding N.v.

Mohamed Swillam

Stephen Roux

Justin Lloyd Kreuzer

Tamer Mohamed Tawfik Ahmed Mohamed Elazhary

Arie Jeffrey Den Boef

Marinus Petrus Reijnders

Arjan Johannes Anton Beukman

Simon Reinald Huisman

Yevgeniy Konstantinovich Shmarev

Irwan Dani Setija

Michael L Nelson

Yuxiang Lin

Muhsin Eralp

Ilse Van Weperen

Tamer Mohamed Tawfik Ahmed Elazhary

A sensor apparatus includes an illumination system, a detector system, and a processor. The illumination system is configured to transmit an illumination beam along an illumination path and includes an adjustable optic. The adjustable optic is configured to transmit the illumination beam toward a diffraction target on a substrate that is disposed adjacent to the illumination system. The transmitting generates a fringe pattern on the diffraction target. A signal beam includes diffraction order subbeams that are diffracted by the diffraction target. The detector system is configured to collect the signal beam. The processor is configured to measure a characteristic of the diffraction target based on the signal beam. The adjustable optic is configured to adjust an angle of incidence of the illumination beam on the diffraction target to adjust a periodicity of the fringe pattern to match a periodicity of the diffraction target.

On chip wafer alignment sensor

A metrology system includes a radiation source, an adjustable diffractive element, an optical system, an optical element, and a processor. The radiation source generates radiation. The adjustable diffractive element diffracts the radiation to generate first and second beams of radiation. The first and second beams have first and second different non-zero diffraction orders, respectively. The optical system directs the first and second beams toward a target structure such that first and second scattered beams of radiation are generated based on the first and second beams, respectively. The metrology system adjusts a phase difference of the first and second scattered beams. The optical element interferes the first and second scattered beams at an imaging detector that generates a detection signal. The processor receives and analyzes the detection signal to determine a property of the target structure based on the adjusted phase difference.

Systems and methods for measuring intensity in a lithographic alignment apparatus

A system includes a radiation source and a phased array. The phased array includes optical elements, waveguides and phase modulators. The phased array generates a beam of radiation. The optical elements radiate radiation waves. The waveguides guide radiation from the radiation source to the optical elements. The phase modulators adjust phases of the radiation waves such that the radiation waves accumulate to form the beam. An amount of incoherence of the beam is based on randomization of the phases.

Metrology systems, coherence scrambler illumination sources and methods thereof

A system includes an illumination system, an optical element, a switching element and a detector. The illumination system includes a broadband light source that generates a beam of radiation. The dispersive optical element receives the beam of radiation and generates a plurality of light beams having a narrower bandwidth than the broadband light source. The optical switch receives the plurality of light 5 beams and transmits each one of the plurality of light beams to a respective one of a plurality of alignment sensor of a sensor array. The detector receives radiation returning from the sensor array and to generate a measurement signal based on the received radiation.

Lithographic apparatus, metrology systems, illumination switches and methods thereof

Systems, apparatuses, and methods are provided for detecting a particle on a substrate surface. An example method can include receiving, by a grating structure, coherent radiation from a radiation source. The method can further include generating, by the grating structure, a focused coherent radiation beam based on the coherent radiation. The method can further include transmitting, by the grating structure, the focused coherent radiation beam toward a region of a surface of a substrate. The method can further include receiving, by the grating structure, photons scattered from the region in response to illuminating the region with the focused coherent radiation beam. The method can further include measuring, by a photodetector, the photons received by the grating structure. The method can further include generating, by the photodetector and based on the measured photons, an electronic signal for detecting a particle located in the region of the surface of the substrate.

Monolithic particle inspection device

Systems, apparatuses, and methods are provided for determining the alignment of a substrate. An example method can include emitting a multi-wavelength radiation beam including a first wavelength and a second wavelength toward a region of a surface of a substrate. The example method can further include measuring a first diffracted radiation beam indicative of first order diffraction at the first wavelength in response to an irradiation of the region by the multi-wavelength radiation beam. The example method can further include measuring a second diffracted radiation beam indicative of first order diffraction at the second wavelength in response to the irradiation of the region by the multi-wavelength radiation beam. Subsequently, the example method can include generating, based on the measured first set of photons and the measured second set of photons, an electronic signal for use in determining an alignment position of the substrate.

Self-referencing integrated alignment sensor

A compact sensor apparatus having an illumination beam, a beam shaping system, a polarization modulation system, a beam projection system, and a signal detection system. The beam shaping system is configured to shape an illumination beam generated from the illumination system and generate a flat top beam spot of the illumination beam over a wavelength range from 400 nm to 2000 nm. The polarization modulation system is configured to provide tenability of linear polarization state of the illumination beam. The beam projection system is configured to project the flat top beam spot toward a target, such as an alignment mark on a substrate. The signal detection system is configured to collect a signal beam comprising diffraction order sub-beams generated from the target, and measure a characteristic (e.g., overlay) of the target based on the signal beam.

Optical designs of miniaturized overlay measurement system

A metrology system comprises a radiation source, an optical element, first and second detectors, an integrated optical device comprising a multimode waveguide, and a processor. The radiation source generates radiation. The optical element directs radiation toward a target to generate scattered radiation from the target. The first detector receives a first portion of the scattered radiation and generates a first detection signal based on the received first portion. The multimode waveguide interferes a second portion of the scattered radiation using modes of the multimode waveguide. The second detector receives the interfered second portion and generates a second detection signal based on the received interfered second portion. The processor receives the first and second detection signals. The processor analyzes the received first portion, the received interfered second portion, and a propagation property of the multimode waveguide. The processor determines the property of the target based on the analysis.

Spectrometric metrology systems based on multimode interference and lithographic apparatus

A system includes an illumination system, an optical element, and a detector. The optical system is implemented on a substrate. The illumination system includes first and second sources and first and second generators. The illumination system generates a beam of radiation. The first and second sources generate respective first and second different wavelength bands. The first and second resonators are optically coupled to respective ones of the first and second sources and narrow respective ones of the first and second wavelength bands. The optical element directs the beam toward a target structure. The detector receives radiation from the target structure and to generate a measurement signal based on the received radiation.

Lithographic apparatus, metrology systems, illumination sources and methods thereof

A detection system () includes an illumination system (), a first optical system (), a phase modulator (), a lock-in detector (), and a function generator (). The illumination system is configured to transmit an illumination beam () along an illumination path. The first optical system is configured to transmit the illumination beam toward a diffraction target () on a substrate (). The first optical system is further configured to transmit a signal beam including diffraction order sub-beams () that are diffracted by the diffraction target. The phase modulator is configured to modulate the illumination beam or the signal beam based on a reference signal. The lock-in detector is configured to collect the signal beam and to measure a characteristic of the diffraction target based on the signal beam and the reference signal. The function generator is configured to generate the reference signal for the phase modulator and the lock-in detector.

Overlay measurement system using lock-in amplifier technique

A sensor apparatus includes a sensor chip, an illumination system, a first optical system, a second optical system, and a detector system. The illumination system is coupled to the sensor chip and transmits an illumination beam along an illumination path. The first optical system is coupled to the sensor chip and includes a first integrated optic to configure and transmit the illumination beam toward a diffraction target on a substrate, disposed adjacent to the sensor chip, and generate a signal beam including diffraction order sub-beams generated from the diffraction target. The second optical system is coupled to the sensor chip and includes a second integrated optic to collect and transmit the signal beam from a first side to a second side of the sensor chip. The detector system is configured to measure a characteristic of the diffraction target based on the signal beam transmitted by the second optical system.

On chip sensor for wafer overlay measurement

A system includes a radiation source, first and second phased arrays, and a detector. The first and second phased arrays include optical elements, a plurality of ports, waveguides, and phase modulators. The optical elements radiate radiation waves. The waveguides guide radiation from a port of the plurality of ports to the optical elements. Phase modulators adjust phases of the radiation waves. One or both of the first and second phased arrays form a first beam and/or a second beam of radiation directed toward a target structure based on the port coupled to the radiation source. The detector receives radiation scattered by the target structure and generates a measurement signal based on the received radiation.

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Wilton, CT, United States of America

Mohamed Swillam