International Business Machines Corporation

Mohamed O Aboelfotoh

Lia Krusin-Elbaum

Michael John Brady

Yuan-Chen Sun

Marvin B Skolnik

Yuk L Tsang

A low temperature annealed Cu silicide or germanide layer on the surface of a single crystalline semiconductor substrate of Si or Ge is used in interconnection metallization for integrated circuits. The Cu silicide or germanide layer is preferably formed by heating Cu deposited on a Si or Ge substrate up to about 200.degree. C. for about 30 minutes. The layer demonstrates superior (near ideal) current/voltage characteristics and can be used as a high temperature (600-800.degree. C.) stable Ohmic/Schottky contact to Si or as a Cu diffusion barrier. Additional embodiments involve a Cu layer on a Ge layer on Si substrate, a Cu layer on a Si.sub.x Ge.sub.1-x layer on a substrate, and the use of an intermediate layer of a refractory metal such as W.

Multilevel electronic structures containing copper layer and

The present invention relates to novel compounds that exhibit unusually low electrical resistivity at room temperature. More specifically, it has been discovered that the incorporation of at least 1 to 15 atomic percent of gallium and/or at least 1 to 15 atomic percent gold into stoichiometric copper germanide (Cu.sub.3 Ge) compound results in a room temperature resistivity comparable to elemental copper, but with superior chemical and electronic stability upon exposure to air or oxygen at high temperatures. Furthermore, the compounds of the present invention have none of the problems associated with the diffusion of copper into elemental and compound semiconductors which oftentimes lead to the degradation of the semiconductor device characteristics. Additionally, the present invention relates to a method of preparing the novel compounds mentioned previously hereinabove.

Process of deposition and solid state reaction for making alloyed highly

Compound with room temperature electrical resistivity comparable to that

A multi-layer contact process is described for providing contact to a shallow semiconductor region forming a semiconductor PN junction and with a silicon semiconductor body. The multi-layer structure includes a layer of polycrystalline silicon doped with an impurity of the same conductivity type as that of the semiconductor region. A first layer of a refractory alloy is deposited over the polycrystalline silicon layer to provide electrically stable interface therewith. A second layer of another refractory metal or alloy is deposited over the first refractory metal alloy layer and serves to protect the shallow PN junction against current leakage failure. A third layer of interconnect metal is deposited over the multi-layer contact structure. The resulting structure provides a low resistance ohmic contact to a shallow semiconductor region with improved electrical characteristics.

Process for making a contact structure including polysilicon and metal

A high resolution gaseous discharge display and/or memory device comprises a panel array of bistable charge storage areas designated gaseous discharge cells or sites, each cell having an associated pair of coordinate orthogonal conductors defining the cell walls which, when appropriately energized, produce a confined gaseous discharge in the selected sites. The conductors are insulated from direct contact with the gas by a dielectric insulator composed of a layer of Group IIA oxide doped with a beneficial amount of one or more transition elements selected from nickel, iron, chromium or manganese, to stabilize and control the secondary-electron emission characteristics of the Group IIA oxide under ion bombardment, to eliminate the decrease in the maximum sustain voltage and the bistable voltage margin of the panel during panel operation and to increase initially the bistable voltage margin of the panel, thereby providing stable operating voltages and extending the life of the gaseous discharge display panel. In a preferred embodiment of the invention, the dielectric insulator comprises magnesium oxide doped with 3-5 percent nickel by weight.

Stabilized plasma display device

A multicolor gaseous discharge display device utilizes electroluminescent techniques as a plasma environment. A layer of electroluminescent phosphor material is used as the dielectric layer overlying the conductor electrodes in an A.C. plasma device. In one embodiment for generating a two color display, only one of the dielectric layers uses an electroluminescent phosphor for a two color display. In a second embodiment, both dielectric layers use different electroluminescent material for a three color display. A layer of n-type semiconductor material is required between the conductor electrodes and the phosphor dielectric to reduce the electroluminescent voltage threshold, while a refractory layer is used to protect the phosphor against ion bombardment during discharge of said device.

Color plasma display device

A D.C. gaseous discharge display panel operated in a storage mode uses a layer of resistive material over the cathodes of the display. In addition to protecting the electrodes from ion bombardment induced sputtering during discharge, the material provides a resistance to each discharge cell, provides isolation between individual cathodes by reducing discharge spreading along the cathode conductors and prevents surface charge building during panel operation. By utilizing a combination of metal and insulator in the resistance layer, the D.C. discharge can be sustained at lower operating voltage, permitting a reduction in the power requirements of the panel.

DC Gas discharge display panel with internal memory

The cathodes in a D.C. gas discharge panel are isolated from the gas by a layer of refractory material doped with a noble metal. The doping is sufficient to prevent the build-up of a surface wall charge on the layer during D.C. operation of the panel.

D.C. Scan panel

A high resolution gaseous discharge display and/or memory device comprises a panel array of bistable charge storage areas designated gaseous discharge cells or sites, each cell having an associated pair of coordinate orthogonal conductors defining the cell walls which, when appropriately energized, produce a confined gaseous discharge in the selected sites. The conductors are insulated from direct contact with the gas by a dielectric insulator, the dielectric insulator being composed of a layer of refractory material having high secondary emission characteristics such as a Group IIA oxide doped with lithium a Group IA element, to prevent degradation of the dielectric during operation, to increase the static margin of the panel and improve the stability of the maximum and minimum sustain voltages, thereby providing stable operating voltages and extending the life of the gaseous discharge panel. Other embodiments of the dielectric insulator utilize additional small concentrations of elements of Groups VIII or V1B with the above combination.

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Poughkeepsie, NY, United States of America

Mohamed O Aboelfotoh