Agere Systems Inc.

Mohamed Laradji

Samir Chaudhry

Paul Arthur Layman

J Ross Thomson

Michelle D Griglione

A thin-film multilayer high-Q inductor having a ferromagnetic core and spanning at least three metal layers is formed by forming a plurality of parallel first metal runners on the semiconductor substrate. A plurality of first and second vertical conductive vias are formed in electrical connection with each end of the plurality of metal runners. A plurality of third and fourth conductive vias are formed over the plurality of first and second conductive vias and a plurality of second metal runners are formed interconnecting the plurality of third and fourth conductive vias. The first metal runners and second metal runners are oriented such that one end of a first metal runner is connected to an overlying end of a second metal runner by way of the first and third vertical conductive vias. The other end of the second metal runner is connected to the next metal one runner by way of the second and fourth vertical conductive vias., forming a continuously conductive structure having a generally helical shape. An inductor core is formed by first forming a silicon layer between each one of the plurality of first metal runners. A germanium layer is formed thereover and the structure is annealed, causing formation of quantum dots of germanium. A cobalt layer is then formed over the quantum dots and another anneal process drives the cobalt into the quantum dots, where it is captured to form the ferromagnetic core.

Multi-layer inductor formed in a semiconductor substrate and having a core of ferromagnetic material

A thin-film multi-layer high Q transformer. To form an outer transformer winding a plurality of parallel first level metal runners are formed in a first insulating layer overlying the semiconductor substrate. A plurality of vertical conductive vias are formed in third and fourth insulating layers and in electrical communication with each end of the first level metal runners. A fourth insulating layer is disposed over the third insulating layer and additional vertical conductive vias and a fourth level metal runner are formed therein. Thus, the fourth level metal runners and the intervening vertical conductive vias connect each of the first level metal runners to form a continuously conductive structure having a generally helical shape. The inner winding of the transformer is similarly formed. A plurality of parallel second level metal runners are formed within the second insulating layer and a plurality of conductive vias and third level metal runners are formed within the third insulating layer to interconnect the plurality of second level metal runners to form a continuously conductive structure having a generally helical shape and disposed at least partially within the outer transformer winding.

Thin film multi-layer high Q transformer formed in a semiconductor substrate

A thin-film multi-layer high Q inductor spanning at least three metal layers is formed by forming a plurality of parallel first metal runners on the semiconductor substrate. A plurality of first and second vertical conductive vias are formed in electrical communications with each end of the plurality of metal runners. A plurality of third and fourth conductive vias are formed over the plurality of first and second conductive vias and a plurality of second metal runners are formed interconnecting the plurality of third and fourth conductive vias. The plurality of first metal runners are in a different vertical than the plurality of second metal runners such that the planes intersect. Thus one end of a first metal runner is connected to an overlying end of a second metal runner by way of the first and third vertical conductive vias. The other end of the second metal runner is connected to the next metal one runner by way of the second and fourth vertical conductive vias., forming a continuously conductive structure having a generally helical shape.

Growing community of inventors

St. Cloud, FL, United States of America

Mohamed Laradji