Qualcomm Incorporated

Apple Inc.

Mohamed Hassan Abu-Rahma

Sei Seung Yoon

Dongkyu Park

Seung-Chul Song

Victor Zyuban

Ajay Bhatia

Cheng Zhong

Hari Rao

Fahad Ahmed

Seong-Ook Jung

Zhongze Wang

Shawn Searles

Lixin Ge

Anosh Bomi Davierwalla

Anthony Ghannoum

Paolo Di Febbo

Brian S Leibowitz

Stanley Seungchul Song

Xiaochun Zhu

Michael R Seningen

Wei Xu

Greg M Hess

Nan Chen

Shingo Suzuki

Martin Saint-Laurent

Animesh Datta

Ramaprasath Vilangudipitchai

Rohan U Mandrekar

Shuai Jiang

Ritu Chaba

Yildiz Sinangil

Jaroslav Raszka

Shahzad Nazar

Beom-Mo Han

Jaemyung Lim

Amrinder S Barn

Peng Jin

Jelam K Parekh

Chaminda Nalaka Vidanagamachchi

Aravind Kandala

Bharan Giridhar

Hyunkook Park

Mohammad Ghasemzadeh

Hui William Song

Mayur V Joshi

Per Hakan Hammarlund

Seid Hadi Rasouli

Mehdi Hamidi Sani

Jamie L Langlinais

Prayag Bhanubhai Patel

Alexander B Uan-Zo-li

Jay Madhukar Shah

Sambasivan Narayan

Jaeyoon Kim

Pangjie Xu

Peeyush Kumar Parkar

Sachin Bapat

Sung J Kim

Hans L Yeager

Mingu Kang

Jiangyi Li

Esin Terizioglu

Naveen Gundubogula

Sung Il Cho

Robert O Bruckner

Anosh B Davierwalla

A compute-memory circuit included in a computer system includes multiple data storage cells and multiplier circuits. The data storage cells store weight values associated with a first operand. The multiplier circuits are coupled to a global bit line and receive the weight values via local bit lines coupled to the data storage cells. Using the received weight values and activation signals indicative of a second operand, the multiplier circuits modify a voltage level of the global bit line. The resultant voltage level on the global bit line is indicative of a product of the first and second operands, and can be converted to a digital value using an analog-to-digital converter circuit.

Performing multiple bit computation and convolution in memory

An apparatus includes an in-memory compute circuit that includes a memory circuit configured to generate a set of products by combining received input values with respective weight values stored in rows of the memory circuit, and to combine the set of products to generate an accumulated output value. The in-memory compute circuit may further include a control circuit and a plurality of routing circuits, including a first routing circuit coupled to a first set of rows of the memory circuit. The control circuit may be configured to cause the first routing circuit to route groups of input values to different ones of the first set of rows over a plurality of clock cycles, and the memory circuit to generate, on a clock cycle following the plurality of clock cycles, a particular accumulated output value that is computed based on the routed groups of input values.

Acceleration of in-memory-compute arrays

A power delivery sub-system included in a computer system employs a primary voltage regulator circuit that generates a primary supply voltage on a primary power supply node. The power delivery sub-system also includes multiple bypass voltage regulator circuits that source corresponding bypass currents to a local power supply nodes in an integrated circuit. The integrated circuit includes multiple circuit blocks coupled to corresponding ones of the local power supply nodes, and multiple local voltage regulator circuits coupled to the primary power supply node. When a voltage level of a given local power supply node drops below a threshold value, a corresponding local voltage regulator circuit sources a supply current to the given local power supply node.

Merged power delivery

An apparatus includes a memory circuit that includes a plurality of sub-arrays. The memory circuit is configured to implement a retention mode according to test information indicating voltage sensitivities for the plurality of sub-arrays. The apparatus also includes a voltage control circuit coupled to a power supply node. The voltage control circuit is configured, in response to activation of the retention mode for the plurality of sub-arrays, to generate, based on the test information, at least two different retention voltage levels for different ones of the plurality of sub-arrays. The at least two different retention voltage levels are lower than a power supply voltage level of the power supply node.

Retention voltage management for a volatile memory

A voltage regulator circuit may generate a regulated voltage level using a voltage level of a feedback node. The regulated voltage level may be distributed, via a power distribution network, to package power supply node of a package, into which an integrated circuit has been mounted. Power switches included in the integrated circuit may couple the package power supply node to respective local power supply nodes in the integrated circuit. A particular power switch may selectively couple different ones of the local power supply nodes to the feedback node, allowing the voltage regulator circuit to compensate for reductions in the regulated voltage level due to the power distribution network, as well as adjust the regulated voltage level based on power consumptions of load circuits coupled to the local power supply nodes.

Voltage regulation using local feedback

Systems, apparatuses, and methods for implementing an anti-aliasing technique for a time-to-digital converter are described. A pulse generator generates a pulse with a width that is representative of a voltage level of a supply voltage. A buffer chain receives the pulse from the pulse generator. A first sum is calculated by adding together a number of one bits in a first portion of the buffer chain. Also, a second sum is calculated by adding together a number of one bits in a second portion of the buffer chain. Then, a third sum is calculated by adding the first sum to the second sum if the first sum is saturated. Otherwise, the third sum is equal to the first sum if the first sum is not saturated. The third sum is used as a representation of the voltage level of the supply voltage.

Anti-aliasing techniques for time-to-digital converters

A memory array that provides an internal retention voltage without a voltage regulator is disclosed. The memory array includes a first group of bit cells coupled between the power supply rail and a ground switch and a second group of bit cells coupled to a retention select circuit. The retention select circuit is coupled to the ground for the first group of bit cells and the power supply rail. The ground switch and the retention select circuit may be operated to switch the bit cells between a nominal operating voltage and a retention voltage. The retention voltage is provided during inactive periods of the memory array to maintain data in the bit cells during the inactive periods.

Sram bit cell retention

Memory circuits used in computer systems may have different operating modes. In a retention mode, a voltage level of an array power supply node coupled to memory cells included in the memory circuit is reduced to a level sufficient to retain data, but not to perform read and write operations to the memory cells. A power converter circuit may be configured to generate the retention voltage level, and adjust the retention voltage level using a leakage current of dummy memory cells included in the memory circuit.

Retention voltage generator circuit

A system and method for efficiently managing switching power of bit lines. In various embodiments, a first bit line in a memory array is pre-charged in multiple discrete steps, rather than in one continuous step. For a read operation that completed and read a logic low level from a first storage node, the first bit line is pre-charged from a ground reference level to a first power supply voltage. Similarly, a second bit line corresponding to a second storage node storing an inverse voltage level of the first storage node is pre-charged from a larger second power supply voltage to the smaller first power supply voltage. When the first time interval has elapsed, the first and second bit lines are pre-charged from the first power supply voltage to the second power supply voltage during a second time interval. Discrete steps are also used for pre-charging after write operations.

Technique to lower switching power of bit-lines by adiabatic charging of SRAM memories

Computer systems may include multiple power switch circuits for coupling circuit blocks to power supply signals. Different power supply signals may be selected for use in the generation a control signal for a power switch device in the power switch circuit. For example, during a particular operating mode of a power switch circuit coupled to a circuit block, a power supply signal with a voltage level greater than an power supply signal for the circuit block may be used to generate the control signal.

Low leakage power switch

A power switch control circuit is disclosed. A sensor circuit may determine a leakage current of a power switch coupled to a power supply signal and a power terminal of a circuit block. The power switch may be configured to selectively couple or decouple the circuit block from the power supply signal using a switch control signal. The switch control circuit may, in response to receiving a request to open the power switch, determine a target voltage level that is greater than a voltage level of the power supply signal for the switch control signal using the leakage current, and transition the switch control signal from an initial voltage to the target voltage level.

Growing community of inventors

San Diego, CA, United States of America

Mohamed Hassan Abu-Rahma