Evatec Ag

Oerlikon Advanced Technologies Ag

Evatec Advanced Technologies Ag

Mohamed Elghazzali

Juergen Weichart

Stanislav Kadlec

Stefan Borja Bammesberger

Sven Uwe Rieschl

Dennis Minkoley

Jurgen Weichart

Jürgen Weichart

Frantisek Balon

Ben Curtis

Stefan Bammesberger

A plasma etching chamber including within a vacuum recipient: an etching compartment with a central axis and a surrounding wall enclosing the etching compartment; a pumping compartment with a metal surrounding wall having a feed through opening; a metal partition wall traverse to the axis separating the etching compartment from the pumping compartment; a pumping slit in or along the partition wall; a workpiece support; a metal tubular arrangement through the opening, including a first part coupled to the workpiece support and a second part coupled to the metal surrounding wall, the second part being electrically conductively joint to the metal surrounding wall; an Rf feed line through the tubular arrangement connected to the workpiece support; a system ground connector at an end of the second part; distributed metal connectors establishing electric contact from the metal surrounding wall, across the pumping slit via the partition wall to the first part.

Plasma etch chamber and method of plasma etching

A method and apparatus for sputter depositing an insulation layer onto a surface of a cavity formed in a substrate and having a high aspect ratio. A target formed from a material to be included in the insulation layer and the substrate are provided in a substantially enclosed chamber defined by a housing. A plasma is ignited within the substantially enclosed chamber and a magnetic field is provided adjacent to a surface of the target to contain the plasma adjacent to the surface of the target. A voltage is rapidly increased to repeatedly establish high-power electric pulses between a cathode and an anode. An average power of the electric pulses is at least 0.1 kW, and can be much greater. An operational parameter of the sputter deposition is controlled to promote sputter depositing of the insulation layer in a transition mode between a metallic mode and a reactive mode.

Reactive sputtering with HIPIMS

A method and apparatus for sputter depositing an insulation layer onto a surface of a cavity formed in a substrate and having a high aspect ratio is provided. A target formed at least in part from a material to be included in the insulation layer and the substrate are provided in a substantially enclosed chamber defined by a housing. A plasma is ignited within the substantially enclosed chamber and a magnetic field is provided adjacent to a surface of the target to at least partially contain the plasma adjacent to the surface of the target. A voltage is rapidly increased to repeatedly establish high-power electric pulses between a cathode and an anode. An average power of the electric pulses is at least 0.1 kW, and can optionally be much greater. An operational parameter of the sputter deposition is controlled to promote sputter depositing of the insulation layer in a transition mode between a metallic mode and a reactive mode.

Reactive sputtering with HIPIMs

Apparatus for depositing a layer on a substrate in a process gas includes a chuck containing a first surface for supporting the substrate, a clamp for securing the substrate to the first surface of the chuck, an evacuatable enclosure enclosing the chuck and the clamp and control apparatus. The evacuatable enclosure includes an inlet, through which the processing gas is insertable into the enclosure. The control apparatus is adapted to move at least one of the chuck and the clamp relative to, and independently of, one another to adjust a spacing between the chuck and the clamp during a single deposition process while maintaining a flow of the processing gas and a pressure within the enclosure that is less than atmospheric pressure.

Apparatus for depositing a layer on a substrate in a processing gas

A method of depositing a metallization structure () comprises depositing a TaN layer () by applying a power supply between an anode and a target in a plurality of pulses to reactively sputter Ta from the target onto the substrate () to form a TaN seed layer (). A Ta layer () is deposited onto the TaN seed layer () by applying the power supply in a plurality of pulses and applying a high-frequency signal to a pedestal supporting the substrate () to generate a self-bias field adjacent to the substrate ().

Apparatus for sputtering and a method of fabricating a metallization structure

Apparatus () for depositing a layer () on a substrate () in a process gas comprises a chuck () comprising a first surface () for supporting the substrate (), a clamp () for securing the substrate () to the first surface () of the chuck (), an evacuatable enclosure () enclosing the chuck () and the clamp () and comprising an inlet, through which the processing gas is insertable into the enclosure (), and control apparatus (). The control apparatus () is adapted to move at least one of the chuck () and the clamp () relative to, and independently of, one another to adjust a spacing between the chuck () and the clamp () during a single deposition process while maintaining a flow of the processing gas and a pressure within the enclosure () that is less than atmospheric pressure.

Growing community of inventors

Feldkirch, Austria

Mohamed Elghazzali