Ferdinand-Braun-Institut Ggmbh, Leibniz-Institut Fur Höchstfrequenztechnik

Mohamed Elattar

Hans Wenzel

Paul Crump

Pietro Della Casa

The present invention relates to a diode laser with a current block and, in particular, to a diode laser with a modified 'p-n-p' or “n-p-n” structure as a current block for reducing the tunneling probability. A diode laser according to the invention comprises an active layer and a layered current block formed outside the active layer, wherein the current block is made of a material doped in opposition to its surroundings for a spatially selective current injection of the active layer between an n-substrate and a p-contact; wherein the current block is separated from adjacent layers via an intrinsic outer layer.

Growing community of inventors

Berlin, Germany

Mohamed Elattar