Nxp B.v.

Mohamed Boutchich

Nader Akil

Michiel Jos Van Duuren

Dusan Golubovic

Almudena Huerta

Vijayaraghavan Madakasira

A memory cell, the memory cell comprising a substrate, a nanowire extending along a vertical trench formed in the substrate, a control gate surrounding the nanowire, and a charge storage structure formed between the control gate and the nanowire.

Nonvolatile memory cell comprising a nanowire and manufacturing method thereof

An electrode for an ionization chamber and an ionization chamber including an electrode are provided wherein the electrode comprises a substrate comprising a first material, and a plurality of nanowires extending from the substrate and manufactured by processing the first material of the substrate.

Growing community of inventors

Heverlee, Belgium

Mohamed Boutchich