Stmicroelectronics(tours) Sas

Stmicroelectronics S.a.

Stmicroelectronics (Rousset) Sas

Stmicroelectronics International N.v.

Stmicroelectronics (Grenoble 2) Sas

Mohamed Boufnichel

Julien Ladroue

Lawrence J Overzet

Mathieu Rouviere

Pascal Gardes

Eric Laconde

Rémi Dussart

Jean-Christophe Houdbert

Thomas Tillocher

Philippe Lefaucheux

Laurent Bellieres

Xavier Mellhaoui

Pierre Ranson

Stéphane Blanchard

The present description concerns a method of forming a cavity in a substrate comprising: the forming of an etch mask comprising, opposite the location of the cavity, a plurality of sets of openings, the ratio between the openings and the mask of each set being selected according to the desired profile of the cavity opposite the surface of the mask having the set inscribed therein; and the wet etching of the substrate through the openings.

Cavity forming method

The present disclosure concerns an integrated circuit comprising a substrate, the substrate comprising a first region having a first thickness and a second region having a second thickness smaller than the first thickness, the circuit comprising a three-dimensional capacitor formed inside and on top of the first region, and at least first and second connection terminals formed on the second region, the first and second connection terminals being respectively connected to first and second electrodes of the three-dimensional capacitor.

Integrated circuit comprising a three-dimensional capacitor

A vertical capacitor includes a stack of layers conformally covering walls of a first material. The walls extend from a substrate made of a second material different from the first material.

Capacitor

The disclosure relates to microbattery devices and assemblies. In an embodiment, a device includes a plurality of microbatteries, a first flexible encapsulation film, and a second flexible encapsulation film. Each of the microbatteries includes a first contact terminal and a second contact terminal spaced apart from one another. The first flexible encapsulation film includes a first conductive layer electrically coupled to the first contact terminal of each of the microbatteries, and a first insulating layer on the first conductive layer. The second flexible encapsulation film includes a second conductive layer electrically coupled to the second contact terminal of each of the microbatteries, and a second insulating layer on the second conductive layer.

Microbattery assembly

Methods and devices for protecting against electrical discharges are provided. One such device for protecting against electrical discharges includes a semiconductor substrate and an isolation trench in the semiconductor substrate. The isolation trench includes an enclosed space that contains a gas.

Isolation trenches for ESD circuits

A battery structure has structure anode and cathode contacts on a front face and on a rear face. The battery structure includes a battery having battery anode and cathode contacts only on a front face thereof. A film including a conductive layer and an insulating layer jackets the battery. The conductive layer extends over the battery anode and cathode contacts and is interrupted therebetween. Openings are provided in the insulating layer on the front and rear faces of the battery structure to form the structure anode and cathode contacts of the battery structure.

Battery with front face and rear face contacts

A self-supporting thin-film battery is manufacture by forming on the upper surface of a support substrate a vertical active stack having as a lower layer a metal layer having formed therein a first contact terminal of a first polarity of the battery and having formed therein as an upper layer a metal layer having a second contact terminal of a second polarity of the battery. A support film is then bonded to an upper surface of the upper layer. The lower layer is the separated from the substrate by projecting a laser beam through the substrate from a lower surface thereof to impinge on the lower layer.

Self-supporting thin-film battery and method of manufacturing such a battery

Identical planar electronic components are stacked in an assembly. Each component has two contact metallizations positioned on edges of a same surface of the component. The components are stacked along a common axis. Each successive component is rotated about the common axis by a fixed angle. A value of the fixed angle is selected to position, side by side, the contact metallization of one component and the contact metallization of another next component adjacent to each other in the stack. Electrical connections are provided between two adjacent contact metallizations.

Assembly of electronic components

Laterally insulated integrated circuit chips are fabricated from a semiconductor wafer. Peripheral trenches are formed in the wafer which laterally delimit integrated circuit chips to be formed. A depth of the peripheral trenches is greater than or equal to a desired final thickness of the integrated circuit chips. The peripheral trenches are formed by a process which repeats successive steps of a) ion etching using a sulfur hexafluoride plasma, and b) passivating using an octafluorocyclobutane plasma. Upon completion of the step of forming the peripheral trenches, lateral walls of the peripheral trenches are covered by an insulating layer of a polyfluoroethene. A thinning step is performed on the lower surface of the wafer until a bottom of the peripheral trenches is reached. The insulating layer is not removed.

Method for fabricating laterally insulated integrated circuit chips

A method for forming a rough silicon wafer including the successive steps of:

Silicon microstructuring method and microbattery

A method of anisotropic plasma etching of a silicon wafer, maintained at a temperature from &#x2212;40&#xb0; C. to &#x2212;120&#xb0; C., comprising alternated and repeated steps of:

Growing community of inventors

Monnaie, France

Mohamed Boufnichel