Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Commissariat a L'energie Atomique

Isorg

Centre National De La Recherche Scientifique

Mohamed Benwadih

Jean-Marie Verilhac

Christophe Serbutoviez

Philippe Coronel

Marie Heitzmann

Romain Gwoziecki

Jacqueline Bablet

Jean-Marc Zanotti

Gilles Philippot

Stéphanie Jacob

Quentin Berrod

Agathe Belime

Raphaël Ramos

A method for producing a conductive area in a polymer material comprises: providing a polymer layer comprising conductive particles with a density such that the polymer layer is insulating, heating the polymer material to a temperature higher than or equal to the glass transition temperature of the polymer material, compressing a portion of the polymer layer using a stamp, in order to obtain a density of conductive particles such that the portion becomes conductive, and removing the stamp from the polymer layer.

Polymer locally comprising conductive areas

An organic photodiode, including a first electrode forming an anode, an active layer, a second electrode, and at least one third electrode, forming a capacitance with another electrode, to trap at least part of dark current or leakage current.

Photodiode device containing a capacitor for controlling dark current or leakage current

A device forming a pressure sensor is provided. The device includes: a substrate made of electrical insulation material including a first reservoir, a second reservoir in communication with the first reservoir and of which two internal walls are each equipped with an electrode, and a flexible membrane made of an electrical insulation material, including a protuberance and secured to the substrate so as to enable movement of the protuberance between a position in which it is at a distance from a liquid filling the first reservoir and at least one second position in which it exerts a pressure on the liquid, thus discharging it at least partially from the first reservoir toward the second reservoir with mechanical contact with the two electrodes, the mechanical contact of the liquid with the electrodes establishing a resistance or capacitance between the electrodes. Application in the production of a touch screen is also provided.

Device forming a pressure sensor, method for producing such a sensor and application in the production of a touch screen

The invention relates to a method for manufacturing adjacent first and second areas of a surface, said areas consisting, respectively, of first and second materials that are different from each other. Said method involves: depositing a first liquid volume that encompasses the first area and comprises a solvent in which the first material is dispersed; depositing a second liquid volume that encompasses the second area and comprises a solvent in which the second material is dispersed; and removing the solvents. According to the invention, the solvents of the first and second volumes are immiscible, and the second volume is simultaneously or consecutively deposited with the deposition of the first volume, before the first volume reaches the second area.

Method for manufacturing two adjacent areas made of different materials

The present invention relates to an organic transistor comprising a conductive element which forms a drain; a conductive element which forms a source located away from the drain; a conductive element which forms a gate having a surface which faces the drain and a surface which faces the source; a semiconducting layer which is in contact with the drain and the source; and a dielectric layer located between, firstly, the gate and, secondly, the source and the drain with the dielectric layer having a dielectric permittivity which varies depending on its thickness. According to the invention, the dielectric layer comprises a layer of a first dielectric material having a dielectric permittivity of less than four in which there is formed, at least between said opposite-facing surfaces, a volume of a second material, said volume having an overall cross-section which tapers from gate towards the space between drain and source and in that the relative dielectric permittivity of the second material exceeds four.

Organic transistor and method for fabricating a dielectric layer of such a transistor

The organic memory device is a double-gate transistor that successively comprises a first gate electrode, a first gate dielectric, an organic semi-conductor material, a second gate dielectric and a second gate electrode. Source and drain electrodes are arranged in the organic semiconductor material and define an inter-electrode surface. A trapping area is arranged between the organic semiconductor material and one of the gate electrodes and is in electric contact with one of the gate electrodes or the organic semi-conductor material. The trapping area is at least facing the inter-electrode surface.

Organic dual-gate memory and method for producing same

The invention relates to a device comprising a layer made from a fluoropolymer, of which at least part of the surface is covered with a composition comprising a polymer having at least one fluorinated function and at least one acid or base function and forming a bonding layer on said fluoropolymer, said bonding layer being fully or partly covered by another layer.

Bonding layer on fluoropolymers

The method for making a hole in a layer includes the provision of first and second adhesion areas on a surface of a support. The first area has dimensions corresponding to the dimensions of the hole. The method includes depositing a layer on the first and second adhesion areas. The material of the layer has an adhesion coefficient to the first area lower than the adhesion coefficient to the second area. The part of layer arranged above the first area is eliminated by a fluid jet.

Method for making holes using a fluid jet

The invention relates to a method of depositing a layer of material onto the surface of an object, of the type comprising the deposition of a layer of solution of said material in a first liquid followed by the evaporation of the first liquid to form the layer of material. According to the invention, the method comprises the formation of a layer of a second liquid interposed between the object and the layer of solution, the second liquid being immiscible with the first liquid, of density greater than that of the first liquid and with an evaporating temperature higher than that of the first liquid.

Method for depositing a material onto the surface of an object

This organic field effect transistor comprises a semiconductor layer made of an organic semiconductor material. The mobility &#x3bc;of the charge carriers in the first portion of the semiconductor layer is X times greater than the mobility &#x3bc;of the charge carriers in the second portion of the semiconductor layer, with the first portion corresponding to 10% of the volume of the semiconductor layer closest to the gate electrode and the second portion corresponding to 10% of the volume of the semiconductor layer closest to the drain and source electrodes.

Organic field-effect transistor and method of fabricating this transistor

A method for producing at least one pattern on a top surface of a support made from a material presenting a first thermal conductivity comprises a step of arranging of a mask made from a material presenting a second thermal conductivity and comprising at least one recess having a shape corresponding to that of the pattern, in contact with a bottom surface of the support, the ratio of the first conductivity over the second conductivity being greater than or equal to 2, or smaller than or equal to &#xbd;, throughout the duration of the method. The method further comprises a step of depositing on the top surface a solution comprising a material designed to form the pattern, and a step of evaporating the solution.

Method for producing localized patterns

Field-effect transistor that includes at least a gate, a layer of insulator, a drain, a source, a semi-conductor material connecting the source to the drain, the gate and the layer of insulator each surrounding the assembly constituted by the source, the drain and the semi-conductor material, the layer of insulator being arranged between the gate and said assembly. The drain and the source are constituted by first and second electrical conductors respectively, arranged in a parallel way and disconnected one from the other, the first and second conductors being surrounded by a layer of semi-conductor over their entire circumference and over at least a part of their length.

Growing community of inventors

Champigny sur Marne, France

Mohamed Benwadih