Qualcomm Incorporated

Apple Inc.

Mohamed Abouzied

Bhushan Shanti Asuri

Ibrahim Ramez Chamas

Li Liu

Chuan Wang

Vinod Panikkath

Abbas Komijani

Peter J Shah

Rajagopalan Rangarajan

Muhammad Hassan

Osama Elhadidy

Anosh Davierwalla

Wireless circuitry can include a radio-frequency amplifier and a power detection circuit coupled to an output of the radio-frequency amplifier. The power detection circuit can include an input transistor, a biasing circuit configured to output a bias voltage for the input transistor and configured to track temperature and voltage variations, and a non-linearity cancellation component configured to generate a current that at least partially cancels a non-linear current associated with the input transistor. The input transistor may be an n-type transistor, and the non-linearity cancellation component may be a p-type metal-oxide-semiconductor capacitor. The biasing circuit can include n-type and p-type diode-connected bias transistors.

Radio-frequency power detector with non-linearity cancellation

Wireless circuitry is provided that includes a radio-frequency amplifier or mixer, a power detector coupled to an input or an output of the radio-frequency amplifier or mixer, and a transimpedance amplifier coupled to an output of the power detector. The transimpedance amplifier can be implemented as a class A amplifier, a class AB amplifier, or an enhanced class AB amplifier. The power detector can include an input transistor having a gate terminal configured to receive a radio-frequency signal, a bias transistor, and a voltage generator configured to apply a calibration voltage to a gate terminal of the bias transistor to mitigate a direct current (DC) offset associated with the power detector.

Radio-frequency power detector with transimpedance amplifier and input offset mitigation

An apparatus is disclosed for oscillator feedthrough calibration, such as a component arrangement that can be calibrated to account for signal leakage from an oscillator coupled to a mixer circuit. In example aspects, the apparatus includes a mixer circuit having a first stage, a second stage, and tuning circuitry. The first stage includes at least one transistor coupled between a mixer input and a mixer output. The second stage includes one or more transistors coupled between the at least one transistor of the first stage and the mixer output. The one or more transistors are also coupled between a local oscillator signal input and the mixer output. The tuning circuitry includes at least one current source coupled to the at least one transistor of the first stage.

Oscillator feedthrough calibration

An aspect relates to an apparatus including a radio frequency (RF) signal power detector. The RF signal power detector includes a first current source configured to generate a first current based on a power level of a first RF signal; a transimpedance amplifier (TIA) configured to generate a first voltage based on the first current, wherein the TIA is coupled between a first upper voltage rail and a lower voltage rail; and a second current source configured to generate a second current related to the first current, wherein the first and second current sources are coupled in series between a second upper voltage rail and the lower voltage rail.

Radio frequency (RF) signal power detector using different power rails to receive currents from which power-indicating voltage is generated

An RF flip chip is provided in which a local bump region adjacent a die corner includes a balun having a centrally-located bump.

High-density flip chip package for wireless transceivers

An apparatus for generating a temperature-dependent current. The apparatus includes an input current scaling circuit configured to generate a first current that varies with temperature in accordance with a first programmable slope, and a second current that varies with temperature in accordance with a second programmable slope; and a current temperature blending circuit configured to generate a third current based on the first current over a first temperature range and the second current over a second temperature range, wherein the first temperature range is different than the second temperature range.

Blending temperature-dependent currents to generate bias current with temperature dependent profile

Certain aspects provide a circuit for frequency conversion. The circuit includes first mixer circuitry coupled to a load circuit and having a first mixer configured to generate a first portion of a frequency-converted differential signal to be provided to the load circuit based on first differential input signals and second differential input signals, and a second mixer configured to generate a second portion of the frequency-converted differential signal based on third differential input signals and fourth differential input signals. The circuit also includes second mixer circuitry coupled to another load circuit and having a third mixer configured to generate a first portion of another frequency-converted differential signal based on the first differential input signals and the fourth differential input signals, and a fourth mixer configured to generate a second portion of the other frequency-converted differential signal based on the third differential input signals and the second differential input signals.

Bandtilt correction using combined signal and image passive mixers

A circuit includes a first transistor that conducts a first current responsive to a DC bias voltage and an RF signal. A second transistor conducts a second current responsive to the DC bias voltage. The first current and the second current are mirrored through a pair of current mirrors coupled together through a low-pass filter to filter the envelope of the RF signal.

Growing community of inventors

La Jolla, CA, United States of America

Mohamed Abouzied