Sony Corporation

Sony Semiconductor Solutions Corporation

Sony Group Corporation

Moe Takeo

Hideaki Togashi

Shinpei Fukuoka

Junpei Yamamoto

Takushi Shigetoshi

Sho Nishida

Hideki Watanabe

Rintaro Koda

Katsunori Yanashima

Nobukata Okano

A solid-state imaging element according to the present disclosure includes one or more photoelectric conversion layers, a penetrating electrode, and a connection pad. The one or more photoelectric conversion layers are provided on one principal surface side serving as a light incidence plane of a semiconductor substrate. The penetrating electrode is provided in a pixel area, connected at one end to the photoelectric conversion layer to penetrate through front and back surfaces of the semiconductor substrate, and transfers an electric charge photoelectrically converted by the photoelectric conversion layer, to a different principal surface side of the semiconductor substrate. The connection pad is provided on a same layer as gates (Ga, Gr, G, and g) of transistors (AMP, RST, TG, and TG) provided on the different principal surface side of the semiconductor substrate, and to which a different end of the penetrating electrode is connected.

Solid-state imaging element, electronic device, and manufacturing method of solid-state imaging element

Provided is an imaging element that includes a semiconductor substrate, a first photoelectric converter, a through electrode, a first dielectric film, and a second dielectric film. The semiconductor substrate has one surface and another surface that are opposed to each other. The semiconductor substrate has a through hole penetrating between the one surface and the other surface. The first photoelectric converter is provided above the one surface of the semiconductor substrate. The through electrode is electrically coupled to the first photoelectric converter and penetrates the semiconductor substrate inside the through hole. The first dielectric film is provided on the one surface of the semiconductor substrate and has a first film thickness. The second dielectric film is provided on a side surface of the through hole and has a second film thickness. The second film thickness is less than the first film thickness.

Imaging element and imaging device

A solid-state image sensor is provided that includes a semiconductor substrate, a charge accumulator disposed in the semiconductor substrate and configured to accumulate charge, a photoelectric converter provided above the semiconductor substrate and configured to convert light to charge, and a through electrode passing through the semiconductor substrate and electrically connecting the charge accumulator with the photoelectric converter. At an end portion on the photoelectric converter side of the through electrode, a cross-sectional area of a conductor positioned at the center of the through electrode in a cut section orthogonal to a through direction of the through electrode gradually increases toward the photoelectric converter along the through direction.

Solid-state image sensor, solid-state imaging device, and method of manufacturing solid-state image sensor

A semiconductor light emitting element has a laminated structure formed by laminating a first compound semiconductor layer, an active layer, and a second compound semiconductor layer. The semiconductor light emitting element satisfies &#x394;I&#x3e;&#x394;I, where &#x394;Iis an operating current range when the temperature of the active layer is T, and &#x394;Iis the operating current range when the temperature of the active layer is T(where T&#x3e;T). The semiconductor light emitting element satisfies P&#x3e;P, where Pis a maximum optical output emitted when the temperature of the active layer is T, and Pis the maximum optical output emitted when the temperature of the active layer is T(where T&#x3e;T).

Semiconductor light emitting element and semiconductor light emitting element assembly

Growing community of inventors

Tokyo, Japan

Moe Takeo