Gte Laboratories Incorporated

Moe S Wasserman

Ernest A Goldman

Optimized switching and retention characteristics of an MNOS memory device are obtained by using as a gate electrode material either metals or semi-metals having a high work function, in conjunction with a gate dielectric layer having a low density of trapping states throughout its volume. The preferred gate electrode materials are either titanium or p.sup.+ -doped polycrystalline silicon.

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Sherborn, MA, United States of America

Moe S Wasserman