Transphorm Inc.

Transphorm Technology, Inc.

Mo Wu

Umesh Kumar Mishra

Rakesh K Lal

Carl Joseph Neufeld

Ilan Ben-Yaacov

Toshihide Kikkawa

David Michael Rhodes

John Kirk Gritters

Xiang Liu

A transistor includes a III-N channel layer; a III-N barrier layer on the III-N channel layer; a source contact and a drain contact, the source and drain contacts electrically coupled to the III-N channel layer; an insulator layer on the III-N barrier layer; a gate insulator partially on the insulator layer and partially on the III-N channel layer, the gate insulator including an amorphous AlSiO layer with 0.2&#x3c;x&#x3c;0.8; and a gate electrode over the gate insulator, the gate electrode being positioned between the source and drain contacts.

Enhancement mode III-nitride devices having an Al-SiO gate insulator

A method of fabricating a III-N device includes forming a III-N channel layer on a substrate, a III-N barrier layer on the channel layer, an insulator layer on the barrier layer, and a trench in a first portion of the device. Forming the trench comprises removing the insulator layer and a part of the barrier layer in the first portion of the device, such that a remaining portion of the barrier layer in the first portion of the device has a thickness away from a top surface of the channel layer, the thickness being within a predetermined thickness range, annealing the III-N device in a gas ambient including oxygen at an elevated temperature to oxidize the remaining portion of the barrier layer in the first portion of the device, and removing the oxidized remaining portion of the barrier layer in the first portion of the device.

Forming enhancement mode III-nitride devices

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Goleta, CA, United States of America

Mo Wu