Hon Hai Precision Industry Co., Ltd.

Tsinghua University

Boe Technology Group Co., Ltd.

Hefei Xinsheng Optoelectronics Technology Co., Ltd.

Hefei Boe Display Technology Co., Ltd.

Mo Chen

Qun-Qing Li

Li-Hui Zhang

Shou-Shan Fan

Zhen-Dong Zhu

Yuan-Hao Jin

Jian Zhao

Dong An

Yang Zhang

Jilei Gao

Songmei Sun

Jinliang Liu

Jin Zhang

Xiao-Yang Xiao

Jing Sun

Miao Zhang

Wuxia Fu

Xuebing Jiang

Xiong Xiong

Huanyu Li

Meng-Xin Ren

Peng Wu

Kai Chen

Yudong Liu

Fangqing Li

Siying Lu

Fei Han

Jun Li

Qingpu Wang

Chao Kong

Wenbo Dong

Jun-Ku Liu

Boxuan Xing

Wangdi Wu

A method of making photolithography mask plate is provided. The method includes: providing a carbon nanotube composite structure, wherein the carbon nanotube composite structure comprises a carbon nanotube layer and a chrome layer coated on the carbon nanotube layer; locating the carbon nanotube composite structure on a substrate to expose partial surfaces of the substrate; and depositing a cover layer on the carbon nanotube composite structure.

Method for making photolithography mask plate

A method of making photolithography mask plate is provided. The method includes: providing a carbon nanotube layer on a substrate; depositing a chrome layer on the carbon nanotube layer, wherein the chrome layer includes a first patterned chrome layer and a second patterned chrome layer, the first patterned chrome layer is located on the carbon nanotube layer, and the second patterned chrome layer is deposited on the substrate corresponding to holes of the carbon nanotube layer; transferring the carbon nanotube layer with the first patterned chrome layer thereon from the substrate to a base, and the carbon nanotube layer being in contact with the base; and depositing a cover layer on the first patterned chrome layer.

A method of making photolithography mask plate is provided. The method includes: providing a chrome layer on a substrate; depositing a carbon nanotube layer on the chrome layer to expose a part of a surface of the chrome layer; etching the chrome layer with the carbon nanotube layer as a mask to obtain a patterned chrome layer; and depositing a cover layer on the carbon nanotube layer.

A shift register circuit and a method of driving the same, a gate driver circuit, an array substrate and a display device. The shift register circuit includes an input subcircuit and a signal output subcircuit. The input subcircuit includes: a control module, which is configured to output a signal of the first voltage terminal to a voltage dividing node under a control of an input signal; an input module configured to output a signal of the voltage dividing node to the signal output subcircuit under a control of the control module; and a voltage dividing module, a resistance value of the voltage dividing module having a negative relationship with a temperature, and the signal output subcircuit is connected with an output terminal of the input module and configured to output a gate scan signal from an output signal terminal under a control of the input module.

Shift register circuit and method of driving the same, gate driver circuit, array substrate and display device

The present disclosure discloses a shift register, a driving method thereof, a driving circuit, and a display device. The shift register includes an input circuit, a first control circuit, a second control circuit, and an output circuit. Signal shift output can be implemented through mutual cooperation between respective circuits. An output signal can be used as a light emitting control signal of a light emitting control transistor, or can be used as a gate scanning signal of a scanning control transistor.

Shift register, driving method thereof, driving circuit, and display device

A thin film transistor, a manufacturing method thereof, an array substrate and a display panel are provided. The thin film transistor includes: a base substrate; and a gate electrode, a gate insulating layer, an active layer and a source/drain electrode layer which are on the base substrate. The source/drain electrode layer includes a source electrode and a drain electrode. The thin film transistor further includes a light blocking layer surrounding the active layer.

Thin film transistor and manufacturing method thereof, array substrate and display panel

A pixel circuit, a method thereof, an electroluminescent panel, and a display device are provided. The pixel circuit includes a first switch sub-circuit, a second switch sub-circuit, a luminescent sub-circuit, and a dual-drive sub-circuit. Through improving the pixel circuit, a first driving terminal of the dual-drive sub-circuit connects to a first node, a second driving terminal of the dual-drive sub-circuit connects to the second node, when a first and a second gate line signal terminal input the gate line scanning signal alternatively, the first and the second switch sub-circuit are working alternatively, cause the first and the second driving terminal are working alternatively, thus to drive the luminescent sub-circuit to emit light. Therefore, the two driving terminals work alternatively to avoid the voltage instability due to threshold voltage shift caused by one driving terminal of the dual-drive sub-circuit works for a long time.

Pixel circuit, driving method thereof, electroluminescent panel and display device

A common voltage compensation circuit unit including a trigger signal terminal, a common voltage output terminal, a design common voltage signal terminal, a power signal terminal, a compensation common voltage signal terminal, a reset signal terminal, a clock signal terminal, a trigger signal input sub-circuit, a first output sub-circuit, a control sub-circuit, a second output sub-circuit, and a reset sub-circuit. The present disclosure further provides a display panel, a display device, and a common voltage compensation method for a display panel.

Common voltage compensation circuit unit, display panel, display device, and common voltage compensation method for display panel

A method of making a thin film transistor, the method includes: providing a semiconductor layer; arranging a first photoresist layer, a nanowire structure, a second photoresist layer on the semiconductor layer, wherein the nanowire structure includes a single nanowire; forming one opening in the first photoresist layer and the second photoresist layer to form an exposed surface, wherein a part of the nanowire is exposed and suspended in the opening; depositing a conductive film layer on the exposed surface using the nanowire structure as a mask, wherein the conductive film layer defines a nano-scaled channel, and the conductive film layer is divided into two regions, one region is used as a source electrode, and the other region is used as a drain electrode; forming an insulating layer on the semiconductor layer to cover the source electrode and the drain electrode, and locating a gate electrode on the insulating layer.

Method for making thin film transistor with nanowires as masks

Provided are a scan driving circuit and driving method thereof, array substrate and a display device. The scan driving circuit includes output ends at m stages, input circuits at m stages, and q shift register circuits. A first end of the input circuit at the i-th stage is connected to the output end at the (i&#x2212;1)-th stage, and i is any integer greater than 1 and less than m+1. Any shift register circuits is respectively connected to k output ends, and second ends of k input circuits, and the k input circuits have a same combination of stage numbers as k output ends, all stage numbers in same combination of stage numbers have the same parity, and k is greater than 1 and less than m. The shift register circuit is configured to output a scanning signal to one output ends, and outputting the scanning signal to which output ends is indicated by an external control signal.

Scan driving circuit and driving method thereof, array substrate and display device

A display substrate, a display device and a method for driving the same are provided. The display substrate includes a plurality of sub-regions. At least one subpixel unit, a common electrode voltage input line, a common electrode voltage control line and at least one control TFT are arranged at each sub-region. At each sub-region, a gate electrode of the control TFT is coupled to the common electrode voltage control line, a source electrode of the control TFT is coupled to the common electrode voltage input line, and a drain electrode of the control TFT is coupled to a common electrode of the subpixel unit.

Display substrate controlling voltage applied from common electrode voltage input line to common electrode, display device and method for driving the same

A method of making microstructures, including: setting a photoresist layer on a surface of a base; covering a surface of the photoresist layer with a photolithography mask plate, wherein the photolithography mask plate includes: a substrate; a patterned chrome layer on a surface of the substrate; a carbon nanotube layer on the patterned chrome layer, wherein a first pattern of the patterned chrome layer is the same as a second pattern of the carbon nanotube layer; a cover layer on the carbon nanotube layer; exposing the photoresist layer to form an exposed photoresist layer by irradiating the photoresist layer through the photolithography mask plate with ultraviolet light; and developing the exposed photoresist layer to obtain a patterned photoresist microstructures.

Method for making microstructures and photolithography mask plate

A method of making microstructures, including: setting a photoresist layer on a base; covering the photoresist layer with a photolithography mask plate, wherein the photolithography mask plate includes: a substrate; a carbon nanotube layer on the substrate; a patterned chrome layer on the carbon nanotube layer so that the carbon nanotube layer is sandwiched between the patterned chrome layer and the substrate, wherein a first pattern of the patterned chrome layer is the same as a second pattern of the carbon nanotube layer; a cover layer on the patterned chrome layer; exposing the photoresist layer to form an exposed photoresist layer by irradiating the photoresist layer through the photolithography mask plate with ultraviolet light; and developing the exposed photoresist layer to obtain a patterned photoresist microstructures.

A method of making microstructures, including: setting a photoresist layer on a surface of a base; covering a surface of the photoresist layer with a photolithography mask plate, wherein the photolithography mask plate includes: a substrate; a carbon nanotube composite structure on a surface of the substrate, wherein the carbon nanotube composite structure includes a carbon nanotube layer and a chrome layer coated on the carbon nanotube layer; and a cover layer on the carbon nanotube composite structure; exposing the photoresist layer to form an exposed photoresist layer by irradiating the photoresist layer through the photolithography mask plate with ultraviolet light; and developing the exposed photoresist layer to obtain a patterned photoresist microstructures.

A shift register including an input circuit, an output circuit, a first output control circuit, a second output control circuit, a reset circuit, a first reset control circuit, a second reset control circuit, and an energy-storing circuit. The first output control circuit is configured to transfer a clock signal present at a third clock signal terminal to a first node in response to the clock signal at the third clock signal terminal being active. The second output control circuit is configured to transfer a voltage present at a first voltage terminal to the first node in response to a clock signal at a fourth clock signal terminal being active.

Growing community of inventors

Beijing, China

Mo Chen