Qucor Pty Limited

Mladen Mitic

Andrew Steven Dzurak

Alexander Rudolf Hamilton

Michelle Yvonne Simmons

Steven Prawer

Eric Gauja

Changyi Yang

Lars Oberbeck

Rolf Brenner

Neil Jonathan Curson

Toby Hallam

David Norman Jamieson

Sean Hearne

Toby Felix Hopf

Frank J Ruess

K E Johnson Goh

Soren Andresen

Eric Guaja

This invention concerns semiconductor devices of the general type comprising a counted number of dopant atoms () implanted in regions of a substrate () that are substantially intrinsic semiconductor. One or more doped surface regions () of the substrate () are metallized to form electrodes () and a counted number of dopant ions () are implanted in a region of the substantially intrinsic semiconductor.

Implanted counted dopant ions

This invention concerns the fabrication of nanoscale and atomic scale devices. The method involves creating one or more registration markers. Using a SEM or optical microscope to form an image of the registration markers and the tip of a scanning tunnelling microscope (STM). Using the image to position and reposition the STM tip to pattern the device structure. Forming the active region of the device and then encapsulating it such that one or more of the registration markers are still visible to allow correct positioning of surface electrodes. The method can be used to form any number of device structures including quantum wires, single electron transistors, arrays or gate regions. The method can also be used to produce 3D devices by patterning subsequent layers with the STM and encapsulating in between.

Fabricating nanoscale and atomic scale devices

Growing community of inventors

Ryde, Australia

Mladen Mitic