Hitachi Automotive Systems, Ltd.

Hitachi Astemo Ltd.

Mizuki Shibata

Hiroshi Onuki

Daisuke Terada

Takayuki Yogo

Akira Uenodan

Takuya Aoyagi

Tatsuya Miyake

Takashi Naitou

Hanae Shimokawa

Hiroyuki Abe

Binti Haridan Fatin Farhanah

Shigenobu Komatsu

Masayuki Hio

Atsuo Soma

Junji Onozuka

Shosaku Ishihara

Provided is a highly reliable thermal flow meter. In a thermal flow meter, a flow rate detection elementthat detects an air flow rate, and a conductive coating filmcontaining a conductive substance and a resin as constituent elements are provided on at least a part of a portion provided in an auxiliary passageon a surface facing a detection surfaceof the flow rate detection element

Thermal flow meter

Provided is a physical quantity measurement device in which a bonding temperature of a bonding layer is lowered to a temperature not affecting an operation of a semiconductor chip and an insulating property of the semiconductor chip and a base is secured. The physical quantity measurement device includes a base (diaphragm), a semiconductor chip (strain detection element) to measure a physical quantity on the basis of stress acting on the base, and a bonding layer to bond the semiconductor chip to the base. The bonding layer has a first bonding layer bonded to the semiconductor chip, a second bonding layer bonded to the base, and an insulating base material disposed between the first bonding layer and the second bonding layer. The first and second bonding layers and contain glass. A thermal expansion coefficient of the first bonding layer is equal to or lower than a thermal expansion coefficient of the second bonding layer, a softening point of the second bonding layer is equal to or lower than a heat resistant temperature of the semiconductor chip, and a softening point of the first bonding layer is equal to or lower than the softening point of the second bonding layer.

Physical quantity measurement device, method for manufacturing same, and physical quantity measurement element

A semiconductor device includes a metal body; a bonding layer placed on the metal body; and a semiconductor chip placed on the bonding layer. The bonding layer includes a filler-containing first layer formed between the metal body and the semiconductor chip and a second layer bonded to the first layer and the semiconductor chip. The second layer has a thermal expansion coefficient higher than that of the first layer.

Semiconductor device, mechanical quantity measuring device, and semiconductor device fabricating method

Provided is a pressure measuring device that can stably bond a strain detection element even to a diaphragm made of metal having a large coefficient of thermal expansion. In order to achieve the above object, the pressure measuring device of the present invention includes: a metal housing including a pressure introduction unit and a diaphragm deformed by a pressure introduced via the pressure introduction unit; and a strain detection element for detecting strain generated in the diaphragm, wherein a base made of a first brittle material is provided on the metal housing, and the strain detection element is bonded to the base via a second brittle material having a melting point lower than a melting point of the base.

High pressure strain detection device with a base made of a first brittle material and a strain detection element bonded to the base via a second brittle material

Growing community of inventors

Hitachinaka, Japan

Mizuki Shibata