Rohm Co., Ltd.

Mizuho Okada

Goro Nakatani

Nobuhisa Yamashita

Yasuhiro Fuwa

Masahiro Sakuragi

Toma Fujita

Masaki Takaoka

Daisuke Kaminishi

A piezoelectric thin film structure includes a substrate, a silicon oxide film disposed on the substrate, a first aluminum oxide film disposed on the silicon oxide film, a lower electrode layer disposed on the first aluminum oxide film, a piezoelectric film layer disposed on the lower electrode layer, and an upper electrode layer disposed on the piezoelectric film layer.

Piezoelectric thin film structure and angular velocity detection apparatus

[Subject] To provide a pressure sensor capable of implementing cost reduction and miniaturization. [Solving Means] A pressure sensorincludes a silicon substrateprovided therein with a reference pressure chamber, a diaphragm, consisting of part of the silicon substrate, formed on a surface layer portion of the silicon substrateto partition a reference pressure chamber, and an etching stop layerformed on a lower surface of the diaphragmfacing the reference pressure chamber. A through-holecommunicating with the reference pressure chamberis formed on the diaphragm, and a filleris arranged in the through-hole

Pressure sensor and method for manufacturing pressure sensor

The acceleration sensor according to the present invention includes a circuit chip having a prescribed circuit built into a front surface thereof; a sensor chip bonded to the front surface of the circuit chip; and a resin package for sealing the circuit chip and the sensor chip, while the sensor chip includes: a membrane arranged to oppose to the front surface of the circuit chip and having a plurality of openings; a piezoresistor formed on a surface of the membrane opposed to the circuit chip; a support section provided on a side opposite to the circuit chip with respect to the membrane and supporting a peripheral edge portion of the membrane; and a weight section provided on the side opposite to the circuit chip with respect to the membrane and integrally held on a central portion of the membrane.

Acceleration sensor, semiconductor device and method of manufacturing semiconductor device

MEMS sensor including substrate, lower thin film confronting one face of the substrate with a space therebetween and having lower through holes extending in the thickness direction thereof, and upper thin film arranged on the opposite side of the substrate confronting the lower thin film with a space therebetween and having upper through holes extending in the thickness direction. A MEMS sensor manufacturing method includes forming a first sacrificing layer on one face of a substrate, forming a lower thin film on the first sacrificing layer with lower through holes individually extending in the thickness direction, forming a second sacrificing layer on the lower thin film, forming an upper thin film on the second sacrificing layer with upper through holes individually extending in the thickness direction, removing the second sacrificing layer through the upper through holes by etching, and removing the first sacrificing layer through the upper and lower through holes by etching.

MEMS sensor, and MEMS sensor manufacturing method

A capacitance type pressure sensor includes a semiconductor substrate having a reference pressure compartment formed therein, a diaphragm formed of a portion of the semiconductor substrate and formed in a surface layer portion of the semiconductor substrate to define the reference pressure compartment, the diaphragm having a through-hole communicating with the reference pressure compartment, fillers arranged within the through-hole, and an isolation insulating layer surrounding the diaphragm to isolate the diaphragm from the remaining portion of the semiconductor substrate.

Capacitance type pressure sensor and method for manufacturing a capacitance type pressure sensor

The MEMS sensor according to the present invention includes a diaphragm. In the diaphragm, an angle formed by two straight lines connecting supporting portions and the center of a main portion with one another respectively is set to satisfy the relation of the following formula (1):(2/1)/(2/1)&#x2267;1&#x2003;&#x2003;(1)

MEMS sensor

An MEMS sensor of the present invention includes a substrate, a lower thin film provided on a surface of the substrate, an upper thin film opposed to the lower thin film at an interval on the side opposite to the substrate, and a wall portion surrounding the lower thin film and the upper thin film and protruding on the side opposite to the lower thin film with respect to the upper thin film.

Growing community of inventors

Kyoto, Japan

Mizuho Okada