Tohoku University

Canon Anelva Corporation

Sony Group Corporation

Shinkawa Ltd.

Sony Corporation

Miyuki Uomoto

Takehito Shimatsu

Yuichi Takahashi

Gen Yonezawa

Takayuki Moriwaki

Takayuki Saitoh

Tomonori Nakamura

Kazuo Miyamoto

Shohei Abe

Yoshikazu Miyamoto

Nobuhiko Katoh

Hiroshi Kikuchi

Kohei Seyama

Yoshihisa Sato

Yuji Eguchi

The present invention achieves chemical bonding by means of a joined film made of oxides formed on a joined surface. In a vacuum container, amorphous oxide thin films are respectively formed on smooth surfaces of two substrates, and the two substrates overlap such that the amorphous oxide thin films formed on the two substrates come into contact with each other, thereby causing chemical bonding involving an atomic diffusion at a joined interface between the amorphous oxide thin films to join the two substrates.

Chemical bonding method and joined structure

A structure according to an embodiment of the present disclosure includes: a first substrate; a second substrate opposed to the first substrate; a bonding layer provided between the first substrate and the second substrate; and a first decorative layer provided between the first substrate and the second substrate.

Structure and exterior housing

A structure body according to an embodiment of the present disclosure includes: a first base having one surface, and having a density lower than a density that is determined by a crystal structure and a composition of a constituent material; a second base disposed to face the one surface of the first base; and a buffer layer provided between the first base and the second base, and containing at least a metal element.

Structure body, structure body manufacturing method, and electronic apparatus

Substrates that are bonding targets are bonded in ambient atmosphere via bonding films, including oxides, formed on bonding faces of the substrates. The bonding films, which are metal or semiconductor thin films formed by vacuum film deposition and at least the surfaces of which are oxidized, are formed into the respective smooth faces of two substrates having the smooth faces that serve as the bonding faces. The bonding films are exposed to a space that contains moisture, and the two substrates are overlapped in the ambient atmosphere such that the surfaces of the bonding films are made to be hydrophilic and the surfaces of the bonding films contact one another. Through this, a chemical bond is generated at the bonded interface, and thereby the two substrates are bonded together in the ambient atmosphere. The bonding strength γ can be improved by heating the bonded substrates at a temperature.

Chemical bonding method, package-type electronic component, and hybrid bonding method for electronic device

There is provided a functional element that includes a first substrate, a second substrate disposed to face the first substrate, and a buffer layer provided between the first substrate and the second substrate. The buffer layer has, in a layer thereof, a distribution of concentration of a metallic element. The distribution changes in a film thickness direction.

Functional element and method of manufacturing functional element, and electronic apparatus

This method for producing a structure wherein base materials are bonded by atomic diffusion comprises: a step for applying a liquid resin on the base material; a step for smoothing the surface of the liquid resin by surface tension; a step for forming a resin layer by curing; a step for forming a metal thin film on the resin layer; a step for forming a metal thin film on the base material; and a step for bringing the metal thin film of the base material and the metal thin film of the base material into close contact with each other, thereby bonding the metal thin film of the resin layer and the metal thin film of the base material with each other by atomic diffusion.

Method for producing structure, and structure

A bonded structure includes a first substrate; a second substrate placed opposite to the first substrate; an intermediate layer provided between the first substrate and the second substrate and including a first oxide thin film layered on the first substrate and a second oxide thin film layered on the second substrate; either or both of the first oxide thin film and the second oxide thin film of the intermediate layer being formed of oxide thin films having increased defects; and an interface between the first oxide thin film and the second oxide thin film=being bonded by chemical bonding, and the interface comprising a low-density portion whose density is lower than that of the two oxide thin films.

Provided is a bonding method for directly bonding an electrode part of a chip component to a bonding part provided on a substrate that is a bonding target, the method comprising: a step for placing the substrate on a stage inside a liquid vessel; a step for injecting liquid into the liquid vessel; and a step for bonding the electrode part of the chip component to the bonding part (electrode part) of the bonding target by superimposing the chip component held by a bonding head in the liquid stored in the liquid vessel over the bonding target and then applying pressure thereto.

Growing community of inventors

Miyagi, Japan

Miyuki Uomoto