Kabushiki Kaisha Toshiba

Miyuki Takenaka

Mitsuhiro Oki

Akira Okada

Yuji Yamada

Masaru Hayashi

Hideki Matsunaga

Miho Muramatsu

Sayaka Morimoto

Tetsuya Tachibe

This invention relates to a method of quantitative analysis of hexavalent chromium in a chromate coating on a substrate. In this method a substrate on which the chromate coating is formed is immersed into an aqueous solution containing lithium hydroxide to extract hexavalent chromium within an extraction solution. Quantitative analysis of extracted hexavalent chromium in the extraction solution is then performed.

Method of quantitative analysis of hexavalent chromium in chromate coating and method for controlling hazardous element in encapsulating resin of resin encapsulation semiconductor device

One embodiment of method for extracting hexavalent chromium includes preparing a liquid sample by adding a fatty acid to a polymer material, adding water or an aqueous alkali solution to this sample, and extracting hexavalent chromium contained in the sample in the water or the aqueous alkali solution.

Method for extracting hexavalent chromium in a polymer material

A method for controlling a hazardous element in an encapsulating resin of a resin encapsulation semiconductor device includes subjecting the device to qualitative analysis with a fluorescent X-ray analyzer to judge whether the hazardous element is contained in the encapsulating resin, aligning a plurality of devices with each of upper and lower surfaces of the devices brought into a plane, setting the surfaces of the devices to cover a full X-ray irradiation plane and subjecting the devices to quantitative analysis with the fluorescent X-ray analyzer to obtain an analytical value of the hazardous element in the encapsulating resin for upper and lower surfaces of the devices, and judging whether the analytical value of the hazardous element which is less influenced by a coexistent element of the analytical values for the upper and lower surfaces of the devices exceeds a threshold value.

According to one embodiment, there is provided a method of analyzing antimony contained in glass according to its valency. This method includes milling glass containing antimony into a glass powder, weighing the glass powder and dissolving the glass powder by using hydrofluoric acid and hydrochloric acid to obtain a glass solution, masking hydrofluoric acid by adding aluminum ions to the glass solution, adding sodium borohydride and hydrochloric acid to the glass solution in which hydrofluoric acid is masked to generate a hydride of antimony (III), determining a concentration of antimony (III) contained in the glass solution based on the hydride, determining a total concentration of antimony contained in the glass solution and calculating a difference between the concentration of antimony (III) and the total concentration of antimony to obtain a concentration of antimony (V) from the difference.

Method for analyzing antimony contained in glass

Disclosed is a method for the quantitative analysis of a metal element contained in a resin material, which permits quantitatively analyzing the harmful substance such as lead contained in a resin material, comprising decomposing the resin material within a container having at least the inner surface formed of a glassy carbon in the presence of an aqueous solution of an oxidizing acid, heating the organic residue of the decomposed resin material so as to convert the residue into an ash, and quantitatively measuring the metal element contained in the organic residue converted into the ash.

Method for quantitative analysis of metal element contained in resin material

Disclosed is a method and an apparatus for etching a silicon material in order to prepare a sample for measuring the impurities which are contained in the silicon material. The silicon material is etched by contacting the silicon material with an etching gas containing a fluorine compound which is selected from the group consisting of xenon fluoride, hydrogen fluoride, oxygen fluoride and halogen fluoride, to produce a product by reaction of the silicon material with the etching gas. The product is heated to evaporate and remove the product from an impurity which is contained in the silicon material and not reactive to the etching gas.

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Yokohama, Japan

Miyuki Takenaka